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Stochastic model of memristor based on the length of conductive region

Author

Listed:
  • Agudov, N.V.
  • Dubkov, A.A.
  • Safonov, A.V.
  • Krichigin, A.V.
  • Kharcheva, A.A.
  • Guseinov, D.V.
  • Koryazhkina, M.N.
  • Novikov, A.S.
  • Shishmakova, V.A.
  • Antonov, I.N.
  • Carollo, A.
  • Spagnolo, B.

Abstract

We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in memristors. The proposed model is described by rather simple equations of Brownian diffusion, does not require significant computational resources for numerical modeling, and allows obtaining the exact analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system, by finding a quite good qualitatively agreement between theory and experiment. Based on the proposed model, the mathematical apparatus of Markov processes for the first passage time of the boundaries can be used to analyse the temporal characteristics of resistive switching.

Suggested Citation

  • Agudov, N.V. & Dubkov, A.A. & Safonov, A.V. & Krichigin, A.V. & Kharcheva, A.A. & Guseinov, D.V. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Antonov, I.N. & Carollo, A. & Spagnolo, B., 2021. "Stochastic model of memristor based on the length of conductive region," Chaos, Solitons & Fractals, Elsevier, vol. 150(C).
    • Handle: RePEc:eee:chsofr:v:150:y:2021:i:c:s0960077921004859
    DOI: 10.1016/j.chaos.2021.111131
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    Cited by:

    1. Kwon, Osung & Kim, Sungjun & Agudov, Nikolay & Krichigin, Alexey & Mikhaylov, Alexey & Grimaudo, Roberto & Valenti, Davide & Spagnolo, Bernardo, 2022. "Non-volatile memory characteristics of a Ti/HfO2/Pt synaptic device with a crossbar array structure," Chaos, Solitons & Fractals, Elsevier, vol. 162(C).
    2. Bartłomiej Garda & Karol Bednarz, 2024. "Comprehensive Study of SDC Memristors for Resistive RAM Applications," Energies, MDPI, vol. 17(2), pages 1-17, January.
    3. Filatov, D.O. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Shenina, M.E. & Antonov, I.N. & Gorshkov, O.N. & Agudov, N.V. & Carollo, A. & Valenti, D. & Spagnolo, B., 2022. "Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor," Chaos, Solitons & Fractals, Elsevier, vol. 156(C).
    4. Lee, Geun Ho & Kim, Tae-Hyeon & Song, Min Suk & Park, Jinwoo & Kim, Sungjoon & Hong, Kyungho & Kim, Yoon & Park, Byung-Gook & Kim, Hyungjin, 2022. "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos, Solitons & Fractals, Elsevier, vol. 157(C).
    5. Bartłomiej Garda, 2021. "Modeling of Memristors under Periodic Signals of Different Parameters," Energies, MDPI, vol. 14(21), pages 1-15, November.
    6. Koryazhkina, M.N. & Filatov, D.O. & Shishmakova, V.A. & Shenina, M.E. & Belov, A.I. & Antonov, I.N. & Kotomina, V.E. & Mikhaylov, A.N. & Gorshkov, O.N. & Agudov, N.V. & Guarcello, C. & Carollo, A. & S, 2022. "Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise," Chaos, Solitons & Fractals, Elsevier, vol. 162(C).

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