Stochastic model of memristor based on the length of conductive region
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DOI: 10.1016/j.chaos.2021.111131
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- Lee, Geun Ho & Kim, Tae-Hyeon & Song, Min Suk & Park, Jinwoo & Kim, Sungjoon & Hong, Kyungho & Kim, Yoon & Park, Byung-Gook & Kim, Hyungjin, 2022. "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos, Solitons & Fractals, Elsevier, vol. 157(C).
- Bartłomiej Garda, 2021. "Modeling of Memristors under Periodic Signals of Different Parameters," Energies, MDPI, vol. 14(21), pages 1-15, November.
- Kwon, Osung & Kim, Sungjun & Agudov, Nikolay & Krichigin, Alexey & Mikhaylov, Alexey & Grimaudo, Roberto & Valenti, Davide & Spagnolo, Bernardo, 2022. "Non-volatile memory characteristics of a Ti/HfO2/Pt synaptic device with a crossbar array structure," Chaos, Solitons & Fractals, Elsevier, vol. 162(C).
- Bartłomiej Garda & Karol Bednarz, 2024. "Comprehensive Study of SDC Memristors for Resistive RAM Applications," Energies, MDPI, vol. 17(2), pages 1-17, January.
- Koryazhkina, M.N. & Filatov, D.O. & Shishmakova, V.A. & Shenina, M.E. & Belov, A.I. & Antonov, I.N. & Kotomina, V.E. & Mikhaylov, A.N. & Gorshkov, O.N. & Agudov, N.V. & Guarcello, C. & Carollo, A. & S, 2022. "Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise," Chaos, Solitons & Fractals, Elsevier, vol. 162(C).
- Filatov, D.O. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Shenina, M.E. & Antonov, I.N. & Gorshkov, O.N. & Agudov, N.V. & Carollo, A. & Valenti, D. & Spagnolo, B., 2022. "Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor," Chaos, Solitons & Fractals, Elsevier, vol. 156(C).
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Keywords
Memristor; Stochasticity; Resistive switching; Yttria stabilized zirconia;All these keywords.
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