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Efficient and self-adaptive in-situ learning in multilayer memristor neural networks

Author

Listed:
  • Can Li

    (University of Massachusetts)

  • Daniel Belkin

    (University of Massachusetts
    Swarthmore College)

  • Yunning Li

    (University of Massachusetts)

  • Peng Yan

    (University of Massachusetts
    Huazhong University of Science and Technology)

  • Miao Hu

    (Hewlett Packard Enterprise
    Binghamton University)

  • Ning Ge

    (HP Inc.)

  • Hao Jiang

    (University of Massachusetts)

  • Eric Montgomery

    (Hewlett Packard Enterprise)

  • Peng Lin

    (University of Massachusetts)

  • Zhongrui Wang

    (University of Massachusetts)

  • Wenhao Song

    (University of Massachusetts)

  • John Paul Strachan

    (Hewlett Packard Enterprise)

  • Mark Barnell

    (Information Directorate)

  • Qing Wu

    (Information Directorate)

  • R. Stanley Williams

    (Hewlett Packard Enterprise)

  • J. Joshua Yang

    (University of Massachusetts)

  • Qiangfei Xia

    (University of Massachusetts)

Abstract

Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.

Suggested Citation

  • Can Li & Daniel Belkin & Yunning Li & Peng Yan & Miao Hu & Ning Ge & Hao Jiang & Eric Montgomery & Peng Lin & Zhongrui Wang & Wenhao Song & John Paul Strachan & Mark Barnell & Qing Wu & R. Stanley Wil, 2018. "Efficient and self-adaptive in-situ learning in multilayer memristor neural networks," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-04484-2
    DOI: 10.1038/s41467-018-04484-2
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    Cited by:

    1. Vasileiadis, Nikolaos & Loukas, Panagiotis & Karakolis, Panagiotis & Ioannou-Sougleridis, Vassilios & Normand, Pascal & Ntinas, Vasileios & Fyrigos, Iosif-Angelos & Karafyllidis, Ioannis & Sirakoulis,, 2021. "Multi-level resistance switching and random telegraph noise analysis of nitride based memristors," Chaos, Solitons & Fractals, Elsevier, vol. 153(P1).
    2. Li, Zhijun & Chen, Kaijie, 2023. "Neuromorphic behaviors in a neuron circuit based on current-controlled Chua Corsage Memristor," Chaos, Solitons & Fractals, Elsevier, vol. 175(P1).
    3. Agudov, N.V. & Dubkov, A.A. & Safonov, A.V. & Krichigin, A.V. & Kharcheva, A.A. & Guseinov, D.V. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Antonov, I.N. & Carollo, A. & Spagnolo, B., 2021. "Stochastic model of memristor based on the length of conductive region," Chaos, Solitons & Fractals, Elsevier, vol. 150(C).

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