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Stochastic resonance in a metal-oxide memristive device

Author

Listed:
  • Mikhaylov, A.N.
  • Guseinov, D.V.
  • Belov, A.I.
  • Korolev, D.S.
  • Shishmakova, V.A.
  • Koryazhkina, M.N.
  • Filatov, D.O.
  • Gorshkov, O.N.
  • Maldonado, D.
  • Alonso, F.J.
  • Roldán, J.B.
  • Krichigin, A.V.
  • Agudov, N.V.
  • Dubkov, A.A.
  • Carollo, A.
  • Spagnolo, B.

Abstract

The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities at an optimal noise intensity corresponding to the stochastic resonance phenomenon and interpreted using a stochastic memristor model taking into account an external noise source added to the control voltage. The obtained results clearly show that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibrium.

Suggested Citation

  • Mikhaylov, A.N. & Guseinov, D.V. & Belov, A.I. & Korolev, D.S. & Shishmakova, V.A. & Koryazhkina, M.N. & Filatov, D.O. & Gorshkov, O.N. & Maldonado, D. & Alonso, F.J. & Roldán, J.B. & Krichigin, A.V. , 2021. "Stochastic resonance in a metal-oxide memristive device," Chaos, Solitons & Fractals, Elsevier, vol. 144(C).
    • Handle: RePEc:eee:chsofr:v:144:y:2021:i:c:s096007792100076x
    DOI: 10.1016/j.chaos.2021.110723
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    References listed on IDEAS

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    1. Spagnolo, B. & Valenti, D. & Guarcello, C. & Carollo, A. & Persano Adorno, D. & Spezia, S. & Pizzolato, N. & Di Paola, B., 2015. "Noise-induced effects in nonlinear relaxation of condensed matter systems," Chaos, Solitons & Fractals, Elsevier, vol. 81(PB), pages 412-424.
    2. B. Spagnolo & A. Dubkov & N. Agudov, 2004. "Enhancement of stability in randomly switching potential with metastable state," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 40(3), pages 273-281, August.
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    4. Bernardo Spagnolo & Davide Valenti, 2008. "Volatility Effects on the Escape Time in Financial Market Models," Papers 0810.1625, arXiv.org.
    5. E. L. Pankratov & B. Spagnolo, 2005. "Optimization of impurity profile for p-n-junction in heterostructures," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 46(1), pages 15-19, July.
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