First principles investigation of physically conductive bridge filament formation of aluminum doped perovskite materials for neuromorphic memristive applications
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DOI: 10.1016/j.chaos.2021.111111
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- Koryazhkina, M.N. & Filatov, D.O. & Shishmakova, V.A. & Shenina, M.E. & Belov, A.I. & Antonov, I.N. & Kotomina, V.E. & Mikhaylov, A.N. & Gorshkov, O.N. & Agudov, N.V. & Guarcello, C. & Carollo, A. & S, 2022. "Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise," Chaos, Solitons & Fractals, Elsevier, vol. 162(C).
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Keywords
ReRAM; Formation energy; Conducting channels; Conducting bridge RAM; Oxygen vacancy;All these keywords.
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