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Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

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  • Filatov, D.O.
  • Koryazhkina, M.N.
  • Novikov, A.S.
  • Shishmakova, V.A.
  • Shenina, M.E.
  • Antonov, I.N.
  • Gorshkov, O.N.
  • Agudov, N.V.
  • Carollo, A.
  • Valenti, D.
  • Spagnolo, B.

Abstract

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

Suggested Citation

  • Filatov, D.O. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Shenina, M.E. & Antonov, I.N. & Gorshkov, O.N. & Agudov, N.V. & Carollo, A. & Valenti, D. & Spagnolo, B., 2022. "Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor," Chaos, Solitons & Fractals, Elsevier, vol. 156(C).
    • Handle: RePEc:eee:chsofr:v:156:y:2022:i:c:s0960077922000212
    DOI: 10.1016/j.chaos.2022.111810
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    References listed on IDEAS

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    1. Dmitri B. Strukov & Gregory S. Snider & Duncan R. Stewart & R. Stanley Williams, 2008. "The missing memristor found," Nature, Nature, vol. 453(7191), pages 80-83, May.
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    Cited by:

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