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Engineering Cu2ZnSn1-xGexS4 alloy hole transport layers for high-performance perovskite solar cells: A device simulation study

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  • Kanoun, Mohammed Benali
  • Belarbi, Mousaab
  • Goumri-Said, Souraya

Abstract

Inorganic chalcogenide-based HTLs, particularly Cu2ZnSnS4 offer promising alternatives due to their superior stability, tunable optoelectronic properties, and cost-effectiveness. This study employs SCAPS-1D numerical simulations to systematically investigate the impact of Ge alloying in Cu2ZnSnS4 HTLs on the performance of perovskite solar cells. We optimize key parameters, including absorber thickness, carrier concentration, defect density, and HTL electron affinity, while evaluating interfacial recombination dynamics, parasitic resistance, and back contact work function. The results reveal that Cu2ZnSn1-xGexS4 alloys HTLs enhance charge extraction, suppress recombination losses, and improve overall device efficiency compared to pure Cu2ZnSnS4. In particular, the Cu2ZnSn0.5Ge0.5S4 HTL delivers an optimal efficiency of 30.65 %, with VOC of 1.274 V, JSC of 26.74 mA/cm2, and FF of 89.97 %, attributed to its optimized band alignment, reduced charge transfer resistance, and enhanced carrier transport properties. Additionally, Nyquist and Mott-Schottky analyses confirm improved charge dynamics and reduced recombination for Ge-alloyed HTLs. These findings underscore the potential of Cu2ZnSn1-xGexS4 as a high-performance HTL for next-generation stable and efficient PSCs, paving the way for their practical implementation.

Suggested Citation

  • Kanoun, Mohammed Benali & Belarbi, Mousaab & Goumri-Said, Souraya, 2026. "Engineering Cu2ZnSn1-xGexS4 alloy hole transport layers for high-performance perovskite solar cells: A device simulation study," Renewable Energy, Elsevier, vol. 256(PA).
    • Handle: RePEc:eee:renene:v:256:y:2026:i:pa:s0960148125015113
    DOI: 10.1016/j.renene.2025.123847
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    References listed on IDEAS

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