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Analysis of air-bridge thermophotovoltaic devices and systems

Author

Listed:
  • Lim, Jihun
  • Forrest, Stephen R.

Abstract

We present a model of air-bridge InGaAs and Si thermophotovoltaic (TPV) systems that guides the optimization of both output power density and efficiency, considering key design factors such as series resistance (Rs), shunt resistance, out-of-band reflectance, and dissipated power. Assuming lossless emitter-to-cell coupling, an InGaAs TPV cell can reach an efficiency of 43.2 % and output power density (Pout) = 1.6 W/cm2 at an emitter temperature of Th = 1060 °C. At Th = 1500 °C, Pout can exceed 9 W/cm2, although ohmic losses may reduce the efficiency to below 35 %. In contrast, Si air-bridge TPVs exhibit relatively high parasitic power losses due to free carrier absorption (FCA), limiting the efficiency to 30.1 % at Th = 1400 °C. By suppressing FCA, this efficiency can be improved to 40 %. However, the high Rs of Si TPV cells restricts Pout to <2 W/cm2, suggesting that Si-based TPV systems may not be suitable for high-power applications. While this model has been used for InGaAs and Si TPVs, its versatility allows for optimizing the performance of TPV systems with other semiconductor materials and device structures.

Suggested Citation

  • Lim, Jihun & Forrest, Stephen R., 2025. "Analysis of air-bridge thermophotovoltaic devices and systems," Energy, Elsevier, vol. 325(C).
    • Handle: RePEc:eee:energy:v:325:y:2025:i:c:s0360544225017104
    DOI: 10.1016/j.energy.2025.136068
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