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General strategy for developing thick-film micro-thermoelectric coolers from material fabrication to device integration

Author

Listed:
  • Xiaowen Sun

    (Beihang University
    Hangzhou Innovation Institute of Beihang University)

  • Yuedong Yan

    (Hangzhou Innovation Institute of Beihang University)

  • Man Kang

    (Beihang University
    Hangzhou Innovation Institute of Beihang University)

  • Weiyun Zhao

    (Hangzhou Innovation Institute of Beihang University)

  • Kaifen Yan

    (Hangzhou Innovation Institute of Beihang University)

  • He Wang

    (Hangzhou Innovation Institute of Beihang University)

  • Ranran Li

    (Hangzhou Innovation Institute of Beihang University)

  • Shijie Zhao

    (Hangzhou Innovation Institute of Beihang University)

  • Xiaoshe Hua

    (Hangzhou Innovation Institute of Beihang University)

  • Boyi Wang

    (Hangzhou Innovation Institute of Beihang University)

  • Weifeng Zhang

    (Hangzhou Innovation Institute of Beihang University)

  • Yuan Deng

    (Beihang University
    Hangzhou Innovation Institute of Beihang University)

Abstract

Micro-thermoelectric coolers are emerging as a promising solution for high-density cooling applications in confined spaces. Unlike thin-film micro-thermoelectric coolers with high cooling flux at the expense of cooling temperature difference due to very short thermoelectric legs, thick-film micro-thermoelectric coolers can achieve better comprehensive cooling performance. However, they still face significant challenges in both material preparation and device integration. Herein, we propose a design strategy which combines Bi2Te3-based thick film prepared by powder direct molding with micro-thermoelectric cooler integrated via phase-change batch transfer. Accurate thickness control and relatively high thermoelectric performance can be achieved for the thick film, and the high-density-integrated thick-film micro-thermoelectric cooler exhibits excellent performance with maximum cooling temperature difference of 40.6 K and maximum cooling flux of 56.5 W·cm−2 at room temperature. The micro-thermoelectric cooler also shows high temperature control accuracy (0.01 K) and reliability (over 30000 cooling cycles). Moreover, the device demonstrates remarkable capacity in power generation with normalized power density up to 214.0 μW · cm−2 · K−2. This study provides a general and scalable route for developing high-performance thick-film micro-thermoelectric cooler, benefiting widespread applications in thermal management of microsystems.

Suggested Citation

  • Xiaowen Sun & Yuedong Yan & Man Kang & Weiyun Zhao & Kaifen Yan & He Wang & Ranran Li & Shijie Zhao & Xiaoshe Hua & Boyi Wang & Weifeng Zhang & Yuan Deng, 2024. "General strategy for developing thick-film micro-thermoelectric coolers from material fabrication to device integration," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48346-6
    DOI: 10.1038/s41467-024-48346-6
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    References listed on IDEAS

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    1. Fengjiao Zhang & Yaping Zang & Dazhen Huang & Chong-an Di & Daoben Zhu, 2015. "Flexible and self-powered temperature–pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials," Nature Communications, Nature, vol. 6(1), pages 1-10, December.
    2. Ravi Anant Kishore & Amin Nozariasbmarz & Bed Poudel & Mohan Sanghadasa & Shashank Priya, 2019. "Ultra-high performance wearable thermoelectric coolers with less materials," Nature Communications, Nature, vol. 10(1), pages 1-13, December.
    3. Cai, Yang & Hong, Bing-Hua & Wu, Wei-Xiong & Wang, Wei-Wei & Zhao, Fu-Yun, 2022. "Active cooling performance of a PCM-based thermoelectric device: Dynamic characteristics and parametric investigations," Energy, Elsevier, vol. 254(PB).
    4. Mamur, Hayati & Bhuiyan, M.R.A. & Korkmaz, Fatih & Nil, Mustafa, 2018. "A review on bismuth telluride (Bi2Te3) nanostructure for thermoelectric applications," Renewable and Sustainable Energy Reviews, Elsevier, vol. 82(P3), pages 4159-4169.
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