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A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters

Author

Listed:
  • Pedro Costa

    (INESC-ID, Energy Systems, Green Energy and Smart Converters Group, 1000-029 Lisbon, Portugal
    Departamento de Engenharia Eletrotécnica e de Computadores, University of Lisbon, Técnico Lisboa, 1049-001 Lisboa, Portugal)

  • Sónia Pinto

    (INESC-ID, Energy Systems, Green Energy and Smart Converters Group, 1000-029 Lisbon, Portugal
    Departamento de Engenharia Eletrotécnica e de Computadores, University of Lisbon, Técnico Lisboa, 1049-001 Lisboa, Portugal)

  • José Fernando Silva

    (INESC-ID, Energy Systems, Green Energy and Smart Converters Group, 1000-029 Lisbon, Portugal
    Departamento de Engenharia Eletrotécnica e de Computadores, University of Lisbon, Técnico Lisboa, 1049-001 Lisboa, Portugal)

Abstract

This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect transistors (MOSFETs). The proposed analytical formulation accounts for the influence of the output current harmonic distortion on the conduction losses as well as the impact of the output parasitic capacitances and the deadtime on the switching losses. The losses are formulated in balanced conditions to select suitable SiC MOFETs for the desired target efficiency. To validate the proposed methodology, a 3-phase inverter is designed to present full load efficiency in excess of 99% when built using SiC MOSFETs antiparalleled with SiC Schottky diodes selected for the specified full load efficiency. Experimental assessment of the designed inverter efficiency is compared with the expected values from the proposed analytical formulation and shown to match or exceed the predicted results for loads ranging from 40% to 100% of full load.

Suggested Citation

  • Pedro Costa & Sónia Pinto & José Fernando Silva, 2023. "A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters," Energies, MDPI, vol. 16(2), pages 1-19, January.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:2:p:818-:d:1031707
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    References listed on IDEAS

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    1. Paweł Szcześniak & Iwona Grobelna & Mateja Novak & Ulrik Nyman, 2021. "Overview of Control Algorithm Verification Methods in Power Electronics Systems," Energies, MDPI, vol. 14(14), pages 1-20, July.
    2. Junghun Kim & Kwangsoo Kim, 2020. "4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance," Energies, MDPI, vol. 13(18), pages 1-12, September.
    3. Xiaofeng Ding & Jiawei Cheng & Feida Chen, 2017. "Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles," Energies, MDPI, vol. 10(4), pages 1-17, April.
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