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A Simple Method for Reducing THD and Improving the Efficiency in CSI Topology Based on SiC Power Devices

Author

Listed:
  • Efrén Fernández

    (Department of Electronic Engineering, University Polytechnique Catalonia, MCIA Group, 08222 Terrassa, Barcelona, Spain)

  • Alejandro Paredes

    (Department of Electronic Engineering, University Polytechnique Catalonia, MCIA Group, 08222 Terrassa, Barcelona, Spain)

  • Vicent Sala

    (Department of Electronic Engineering, University Polytechnique Catalonia, MCIA Group, 08222 Terrassa, Barcelona, Spain)

  • Luis Romeral

    (Department of Electronic Engineering, University Polytechnique Catalonia, MCIA Group, 08222 Terrassa, Barcelona, Spain)

Abstract

Silicon carbide (SiC)-based switching devices provide significant performance improvements in many aspects, including lower power dissipation, higher operating temperatures, and faster switching; compared with conventional Si devices, all these features contribute to these devices generating interest in applications for electric traction systems. The topology that is frequently used in these systems is the voltage source inverter (VSI), but the use of SiC devices in the current source inverter topology (CSI), which is considered as an emerging topology, generates interest. This paper presents a method for improving total harmonic distortion (THD) in the currents of output and efficiency in SiC current source inverter for future application in an electric traction system. The method that is proposed consists of improving the coupling of a bidirectional converter topology, voltage current (V-I) and CSI. The V-I converter serves as a current regulator for the CSI, and allows for the recovery of energy. The method involves an effective selection of the switching frequencies and phase angles for the carrier signals that are present in each converter topology. With this method, it is expected to have a reduction of the total harmonic distortion, THD in the output currents. In addition, a comparative analysis between converters with all-SiC technology and converters with hybrid technology is realized, to verify the impact of the SiC devices in the power converters efficiency.

Suggested Citation

  • Efrén Fernández & Alejandro Paredes & Vicent Sala & Luis Romeral, 2018. "A Simple Method for Reducing THD and Improving the Efficiency in CSI Topology Based on SiC Power Devices," Energies, MDPI, vol. 11(10), pages 1-23, October.
    • Handle: RePEc:gam:jeners:v:11:y:2018:i:10:p:2798-:d:176389
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    References listed on IDEAS

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    1. Xiaofeng Ding & Jiawei Cheng & Feida Chen, 2017. "Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles," Energies, MDPI, vol. 10(4), pages 1-17, April.
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    Cited by:

    1. Serhii Stepenko & Oleksandr Husev & Dmitri Vinnikov & Carlos Roncero-Clemente & Sergio Pires Pimentel & Elena Santasheva, 2019. "Experimental Comparison of Two-Level Full-SiC and Three-Level Si–SiC Quasi-Z-Source Inverters for PV Applications," Energies, MDPI, vol. 12(13), pages 1-17, June.
    2. Rajvikram Madurai Elavarasan & Aritra Ghosh & Tapas K. Mallick & Apoorva Krishnamurthy & Meenal Saravanan, 2019. "Investigations on Performance Enhancement Measures of the Bidirectional Converter in PV–Wind Interconnected Microgrid System," Energies, MDPI, vol. 12(14), pages 1-22, July.
    3. Krzysztof Blecharz & Marcin Morawiec, 2019. "Nonlinear Control of a Doubly Fed Generator Supplied by a Current Source Inverter," Energies, MDPI, vol. 12(12), pages 1-15, June.
    4. Rui Li & Fangyuan Shi & Xu Cai & Haibo Xu, 2019. "Influence of Parasitic Parameters on DC–DC Converters and Their Method of Suppression in High Frequency Link 35 kV PV Systems," Energies, MDPI, vol. 12(19), pages 1-24, September.

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