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Design of Y-doped TiO2 buried layer for antimony sulfide indoor photovoltaics

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  • Guo, Fuling
  • Hu, Guiju
  • He, Nianwei
  • Guo, Dongchen
  • Yao, Ge
  • Liu, Xingpei
  • Chen, Wangchao
  • Shi, Chengwu
  • Wang, Yanqing

Abstract

Antimony sulfide (Sb2S3) is an ideal light absorber layer for indoor photovoltaics (IPVs) due to the ∼1.70 eV band gap, matching perfectly with the spectrum of the white light-emitting diodes (LEDs) for indoor illumination. Herein, the titanium dioxide (TiO2) is applied as buried layer to mitigate the parasitic absorption, which significantly affects the light harvesting for indoor LED illumination. Furthermore, the yttrium doped (Y-doped) strategy is adopted to enhance the driving force of electron-injection and the performance of electron transport. As a result, the champion Sb2S3 IPVs with the optimal 0.10 % atomic ratio of Y/Ti exhibit the best performance of 17.10 % under CT 3347 and 1000 lux. Meanwhile, the devices exhibit the performance of 7.41 % under 1 sun illumination. These achievements reveal that the Y-doped TiO2 film is an effective buried layer for suppressing the parasitic absorption and modifying the electron transport of buried interface for high performance Sb2S3 indoor photovoltaics.

Suggested Citation

  • Guo, Fuling & Hu, Guiju & He, Nianwei & Guo, Dongchen & Yao, Ge & Liu, Xingpei & Chen, Wangchao & Shi, Chengwu & Wang, Yanqing, 2026. "Design of Y-doped TiO2 buried layer for antimony sulfide indoor photovoltaics," Renewable Energy, Elsevier, vol. 256(PI).
    • Handle: RePEc:eee:renene:v:256:y:2026:i:pi:s0960148125023717
    DOI: 10.1016/j.renene.2025.124707
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    References listed on IDEAS

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    1. Randall, J.F. & Jacot, J., 2003. "Is AM1.5 applicable in practice? Modelling eight photovoltaic materials with respect to light intensity and two spectra," Renewable Energy, Elsevier, vol. 28(12), pages 1851-1864.
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