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Purely electronic insulator-metal transition in rutile VO2

Author

Listed:
  • Shaobo Cheng

    (Brookhaven National Laboratory
    Zhengzhou University)

  • Henry Navarro

    (University of California San Diego
    Andrews University)

  • Zishen Wang

    (Mail Code 0448)

  • Xing Li

    (Brookhaven National Laboratory
    Zhengzhou University)

  • Jasleen Kaur

    (Mail Code 0448
    Mail Code 0448)

  • Alexandre Pofelski

    (Brookhaven National Laboratory)

  • Qingping Meng

    (Brookhaven National Laboratory)

  • Chenyu Zhou

    (Brookhaven National Laboratory)

  • Chi Chen

    (Mail Code 0448)

  • Mark P. M. Dean

    (Brookhaven National Laboratory)

  • Mingzhao Liu

    (Brookhaven National Laboratory)

  • Ali C. Basaran

    (University of California San Diego)

  • Marcelo Rozenberg

    (Université Paris Saclay)

  • Shyue Ping Ong

    (Mail Code 0448)

  • Ivan K. Schuller

    (University of California San Diego)

  • Yimei Zhu

    (Brookhaven National Laboratory)

Abstract

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO2), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO2. The insulating-rutile VO2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO2, and widens its applications in fast-response, low-energy neuromorphic devices.

Suggested Citation

  • Shaobo Cheng & Henry Navarro & Zishen Wang & Xing Li & Jasleen Kaur & Alexandre Pofelski & Qingping Meng & Chenyu Zhou & Chi Chen & Mark P. M. Dean & Mingzhao Liu & Ali C. Basaran & Marcelo Rozenberg , 2025. "Purely electronic insulator-metal transition in rutile VO2," Nature Communications, Nature, vol. 16(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-60243-0
    DOI: 10.1038/s41467-025-60243-0
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    References listed on IDEAS

    as
    1. Debasish Mondal & Smruti Rekha Mahapatra & Abigail M. Derrico & Rajeev Kumar Rai & Jay R. Paudel & Christoph Schlueter & Andrei Gloskovskii & Rajdeep Banerjee & Atsushi Hariki & Frank M. F. DeGroot & , 2023. "Modulation-doping a correlated electron insulator," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
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