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Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

Author

Listed:
  • Zenghui Wu

    (City University of Hong Kong)

  • Yuxuan Zhang

    (City University of Hong Kong)

  • Boxiang Gao

    (City University of Hong Kong)

  • You Meng

    (City University of Hong Kong)

  • He Shao

    (City University of Hong Kong)

  • Dengji Li

    (City University of Hong Kong)

  • Pengshan Xie

    (City University of Hong Kong)

  • Weijun Wang

    (City University of Hong Kong)

  • Bowen Li

    (City University of Hong Kong
    City University of Hong Kong)

  • Chenxu Zhang

    (City University of Hong Kong
    College of Electronics and Information Engineering)

  • Yi Shen

    (City University of Hong Kong)

  • Di Yin

    (City University of Hong Kong)

  • Dong Chen

    (City University of Hong Kong)

  • Quan Quan

    (City University of Hong Kong)

  • SenPo Yip

    (Kyushu University)

  • Johnny C. Ho

    (City University of Hong Kong
    City University of Hong Kong
    Kyushu University
    City University of Hong Kong)

Abstract

Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices.

Suggested Citation

  • Zenghui Wu & Yuxuan Zhang & Boxiang Gao & You Meng & He Shao & Dengji Li & Pengshan Xie & Weijun Wang & Bowen Li & Chenxu Zhang & Yi Shen & Di Yin & Dong Chen & Quan Quan & SenPo Yip & Johnny C. Ho, 2025. "Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-60038-3
    DOI: 10.1038/s41467-025-60038-3
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