Author
Listed:
- Qiman Li
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Wenming Chai
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Xin Luo
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Weidong Zhu
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Dazheng Chen
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Long Zhou
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China)
- He Xi
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China
School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China)
- Hang Dong
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Chunfu Zhang
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
- Yue Hao
(State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology & Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an 710071, China)
Abstract
All-perovskite tandem solar cells (APTSCs) offer a promising pathway to surpassing the efficiency limits of single-junction photovoltaics. The wide-bandgap (WBG) subcell, serving as the top absorber, plays a critical role in optimizing light harvesting and charge extraction in tandem architectures. This review comprehensively summarizes recent advancements in WBG subcells, focusing on material design, defect passivation strategies, and interfacial engineering to address challenges such as phase instability, halide segregation, and voltage losses. Key innovations, including compositional tuning, additive engineering, and charge transport layer optimization, are critically analyzed for their contributions to efficiency and stability enhancement. Despite significant progress, challenges remain regarding scalability, long-term stability under illumination, and cost-effective fabrication. Future research directions include the development of lead-reduced perovskites, machine learning-guided material discovery, and scalable deposition techniques. This review provides insights into advancing WBG subcells toward high-efficiency, stable, and eco-friendly APTSCs for next-generation solar energy applications.
Suggested Citation
Qiman Li & Wenming Chai & Xin Luo & Weidong Zhu & Dazheng Chen & Long Zhou & He Xi & Hang Dong & Chunfu Zhang & Yue Hao, 2025.
"Wide-Bandgap Subcells for All-Perovskite Tandem Solar Cells: Recent Advances, Challenges, and Future Perspectives,"
Energies, MDPI, vol. 18(10), pages 1-29, May.
Handle:
RePEc:gam:jeners:v:18:y:2025:i:10:p:2415-:d:1651545
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