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In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs

Author

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  • Yizhen Zheng

    (Zhejiang University)

  • Xing Lin

    (Zhejiang University)

  • Jiongzhao Li

    (Zhejiang University)

  • Jianan Chen

    (Zhejiang University)

  • Wenhao Wu

    (Zhejiang University)

  • Zixuan Song

    (Zhejiang University)

  • Yuan Gao

    (Najing Technology Corporation Ltd.)

  • Zhuang Hu

    (Zhejiang University)

  • Huifeng Wang

    (Zhejiang University)

  • Zikang Ye

    (Zhejiang University)

  • Haiyan Qin

    (Zhejiang University)

  • Xiaogang Peng

    (Zhejiang University)

Abstract

Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.

Suggested Citation

  • Yizhen Zheng & Xing Lin & Jiongzhao Li & Jianan Chen & Wenhao Wu & Zixuan Song & Yuan Gao & Zhuang Hu & Huifeng Wang & Zikang Ye & Haiyan Qin & Xiaogang Peng, 2025. "In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs," Nature Communications, Nature, vol. 16(1), pages 1-12, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-58471-5
    DOI: 10.1038/s41467-025-58471-5
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