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Electron/infrared-phonon coupling in ABC trilayer graphene

Author

Listed:
  • Xiaozhou Zan

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Xiangdong Guo

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Sciences)

  • Aolin Deng

    (Shanghai Jiao Tong University)

  • Zhiheng Huang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Le Liu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Fanfan Wu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yalong Yuan

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jiaojiao Zhao

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yalin Peng

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Lu Li

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yangkun Zhang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Xiuzhen Li

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jundong Zhu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jingwei Dong

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Dongxia Shi

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory, Dongguan)

  • Wei Yang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory, Dongguan)

  • Xiaoxia Yang

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Sciences)

  • Zhiwen Shi

    (Shanghai Jiao Tong University)

  • Luojun Du

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Qing Dai

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Sciences)

  • Guangyu Zhang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory, Dongguan)

Abstract

Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significant electron-infrared phonon coupling strength. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering.

Suggested Citation

  • Xiaozhou Zan & Xiangdong Guo & Aolin Deng & Zhiheng Huang & Le Liu & Fanfan Wu & Yalong Yuan & Jiaojiao Zhao & Yalin Peng & Lu Li & Yangkun Zhang & Xiuzhen Li & Jundong Zhu & Jingwei Dong & Dongxia Sh, 2024. "Electron/infrared-phonon coupling in ABC trilayer graphene," Nature Communications, Nature, vol. 15(1), pages 1-6, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46129-7
    DOI: 10.1038/s41467-024-46129-7
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