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Comparison of potential-induced degradation (PID) of n-type and p-type silicon solar cells

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  • Šlamberger, Jan
  • Schwark, Michael
  • Van Aken, Bas B.
  • Virtič, Peter

Abstract

Potential-induced degradation (PID) of photovoltaic (PV) modules is one of the most severe types of degradation, where power losses on system level may even exceed 30%. The PID process depends on the strength of the electric field, the temperature, the relative humidity, conductive soiling, time and the PV module materials. For p-type cells, it has been established that the decrease of the shunt resistance, due to migration of sodium ions across the n/p junction is the root cause of the degradation. On the other hand, it has recently been confirmed for n-type cells that the PID occurs due to an increase in recombination as charges are driven to the anti-reflection (AR) coating/emitter interface. In this paper, we present the comparison between PID of p-type and n-type crystalline silicon (c-Si) solar cells and their progression of PID. The time evolution of PID is studied by light and dark I-V curve measurements, electroluminescence images and progressions of the one- and two-diode equivalent model parameters, viz. photocurrent, 1st and 2nd diode reverse saturation currents, 1st and 2nd diode ideality factors, shunt resistance and series resistance.

Suggested Citation

  • Šlamberger, Jan & Schwark, Michael & Van Aken, Bas B. & Virtič, Peter, 2018. "Comparison of potential-induced degradation (PID) of n-type and p-type silicon solar cells," Energy, Elsevier, vol. 161(C), pages 266-276.
    • Handle: RePEc:eee:energy:v:161:y:2018:i:c:p:266-276
    DOI: 10.1016/j.energy.2018.07.118
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    References listed on IDEAS

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    1. Dehghanzadeh, Ahmad & Farahani, Gholamreza & Maboodi, Mohsen, 2017. "A novel approximate explicit double-diode model of solar cells for use in simulation studies," Renewable Energy, Elsevier, vol. 103(C), pages 468-477.
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    1. Mahmoud Dhimish & Yihua Hu & Nigel Schofield & Romênia G. Vieira, 2020. "Mitigating Potential-Induced Degradation (PID) Using SiO 2 ARC Layer," Energies, MDPI, vol. 13(19), pages 1-12, October.

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