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Characterization of Capacitance-Voltage and CurrentVoltage Behavior in TiN/Al2O3/p-Si MIS Structures

Author

Listed:
  • Slah Hlali
  • Neila Hizem
  • Adel Kalboussi

    (Laboratory of Microelectronics and Instrumentation (LR13ES12), Faculty of Sciences of Monastir, Avenue de l’environnement, University of Monastir, Tunisia)

Abstract

This study investigates the electrical properties of the novel MIS structure TiN/Al2 O3/P-Si through C-V and I-V analyses, employing Silvaco TCAD software for simulation.

Suggested Citation

  • Slah Hlali & Neila Hizem & Adel Kalboussi, 2024. "Characterization of Capacitance-Voltage and CurrentVoltage Behavior in TiN/Al2O3/p-Si MIS Structures," Biomedical Journal of Scientific & Technical Research, Biomedical Research Network+, LLC, vol. 56(3), pages 48182-48196, May.
    • Handle: RePEc:abf:journl:v:56:y:2024:i:3:p:48182-48196
    DOI: 10.26717/BJSTR.2024.56.008869
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    References listed on IDEAS

    as
    1. Angus I. Kingon & Jon-Paul Maria & S. K. Streiffer, 2000. "Alternative dielectrics to silicon dioxide for memory and logic devices," Nature, Nature, vol. 406(6799), pages 1032-1038, August.
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    JEL classification:

    • R00 - Urban, Rural, Regional, Real Estate, and Transportation Economics - - General - - - General
    • Z0 - Other Special Topics - - General

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