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Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities

Author

Listed:
  • Guanhua Long

    (Peking University)

  • Yuru Wang

    (Peking University)

  • Tianshun Bai

    (Peking University)

  • Wangchang Li

    (Peking University)

  • Panpan Zhang

    (Beijing University of Posts and Telecommunications)

  • Xiaosong Deng

    (Peking University)

  • Xiang Cai

    (Peking University)

  • Meiqi Xi

    (Peking University)

  • Yanxia Lin

    (Peking University)

  • Xiaohan Cheng

    (Peking University)

  • Chenwei Fan

    (Peking University)

  • Fan Xia

    (Peking University)

  • Xiao Luo

    (Peking University)

  • Zhishuai Zhang

    (Tsinghua University)

  • Xuelei Liang

    (Peking University)

  • Zhiyong Zhang

    (Peking University)

  • Nan Sun

    (Tsinghua University)

  • Lian-Mao Peng

    (Peking University
    Peking University)

  • Youfan Hu

    (Peking University)

Abstract

Digital-driven scaling poses significant problems to analog circuits because scaling severely deteriorates transistor current saturation, significantly degrading the intrinsic gain. Special material properties of emerging low-dimensional semiconductors trigger the possibility of providing solutions. We report complementary carbon nanotube thin-film transistors with negative differential resistance-induced current super-saturation for high, exponentially variable intrinsic gain with immunity against degradation during scaling. Current super-saturation at the negative-to-positive differential resistance transition boundary provides intrinsic gain singularities. The large-window, gate-modulated negative differential resistance behavior derived from carbon nanotube’s characteristics enables its practical utilization in circuits. When approaching the singularity, we record that the intrinsic gain varies by orders of magnitude, ranging from 102 to 106 at different operation points. We further demonstrate high and exponentially variable gain in an operational amplifier, showing a tunable single-stage gain ranging from 35 to 60 decibels.

Suggested Citation

  • Guanhua Long & Yuru Wang & Tianshun Bai & Wangchang Li & Panpan Zhang & Xiaosong Deng & Xiang Cai & Meiqi Xi & Yanxia Lin & Xiaohan Cheng & Chenwei Fan & Fan Xia & Xiao Luo & Zhishuai Zhang & Xuelei L, 2025. "Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities," Nature Communications, Nature, vol. 16(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-58399-w
    DOI: 10.1038/s41467-025-58399-w
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    References listed on IDEAS

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    1. Gage Hills & Christian Lau & Andrew Wright & Samuel Fuller & Mindy D. Bishop & Tathagata Srimani & Pritpal Kanhaiya & Rebecca Ho & Aya Amer & Yosi Stein & Denis Murphy & Arvind & Anantha Chandrakasan , 2019. "Modern microprocessor built from complementary carbon nanotube transistors," Nature, Nature, vol. 572(7771), pages 595-602, August.
    2. Wei Cao & Kaustav Banerjee, 2020. "Is negative capacitance FET a steep-slope logic switch?," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
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