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Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

Author

Listed:
  • Yi-Hsun Chen

    (Monash University
    Monash University)

  • Ping-Yuan Lo

    (National Yang Ming Chiao Tung University)

  • Kyle W. Boschen

    (Monash University
    Swinburne University of Technology)

  • Chih-En Hsu

    (Tamkang University)

  • Yung-Ning Hsu

    (Tamkang University)

  • Luke N. Holtzman

    (Columbia University)

  • Guan-Hao Peng

    (National Yang Ming Chiao Tung University)

  • Chun-Jui Huang

    (National Yang Ming Chiao Tung University)

  • Madisen Holbrook

    (Columbia University)

  • Wei-Hua Wang

    (Academia Sinica)

  • Katayun Barmak

    (Columbia University)

  • James Hone

    (Columbia University)

  • Pawel Hawrylak

    (University of Ottawa)

  • Hung-Chung Hsueh

    (Tamkang University)

  • Jeffrey A. Davis

    (Monash University
    Swinburne University of Technology)

  • Shun-Jen Cheng

    (National Yang Ming Chiao Tung University)

  • Michael S. Fuhrer

    (Monash University
    Monash University
    Monash University)

  • Shao-Yu Chen

    (Monash University
    National Taiwan University
    National Taiwan University)

Abstract

Materials capable of light upconversion—transforming low-energy photons into higher-energy ones—are pivotal in advancing optoelectronics, energy solutions, and photocatalysis. However, the discovery in various materials pays little attention on few-layer transition metal dichalcogenides, primarily due to their indirect bandgaps and weaker light-matter interactions. Here, we report a pronounced light upconversion in few-layer transition metal dichalcogenides through upconversion photoluminescence spectroscopy. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light (2.34–3.1 eV). The findings pave the way for further exploration of light upconversion regarding fundamental properties and device applications in two-dimensional semiconductors.

Suggested Citation

  • Yi-Hsun Chen & Ping-Yuan Lo & Kyle W. Boschen & Chih-En Hsu & Yung-Ning Hsu & Luke N. Holtzman & Guan-Hao Peng & Chun-Jui Huang & Madisen Holbrook & Wei-Hua Wang & Katayun Barmak & James Hone & Pawel , 2025. "Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides," Nature Communications, Nature, vol. 16(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57991-4
    DOI: 10.1038/s41467-025-57991-4
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    References listed on IDEAS

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