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High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Author

Listed:
  • Qingxuan Li

    (Anhui University
    Fudan University)

  • Siwei Wang

    (Fudan University)

  • Zhenhai Li

    (Fudan University)

  • Xuemeng Hu

    (Fudan University)

  • Yongkai Liu

    (Fudan University)

  • Jiajie Yu

    (Fudan University)

  • Yafen Yang

    (Fudan University)

  • Tianyu Wang

    (Fudan University)

  • Jialin Meng

    (Fudan University)

  • Qingqing Sun

    (Fudan University)

  • David Wei Zhang

    (Fudan University)

  • Lin Chen

    (Fudan University
    Zhangjiang Fudan International Innovation Center)

Abstract

With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO2 (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (ION/IOFF) of over 108, and high endurance up to 2×107 cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorphic properties. The device exhibits excellent bending reliability over 5×105 pulse cycles at a bending radius of 5 mm. The efficient integration of hafnium-based ferroelectric materials with promising ultrathin channel materials (ITO) offers unique opportunities to enable high-performance back-end-of-line (BEOL) compatible wearable FeFETs for edge intelligence applications.

Suggested Citation

  • Qingxuan Li & Siwei Wang & Zhenhai Li & Xuemeng Hu & Yongkai Liu & Jiajie Yu & Yafen Yang & Tianyu Wang & Jialin Meng & Qingqing Sun & David Wei Zhang & Lin Chen, 2024. "High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46878-5
    DOI: 10.1038/s41467-024-46878-5
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    1. Qing Luo & Yan Cheng & Jianguo Yang & Rongrong Cao & Haili Ma & Yang Yang & Rong Huang & Wei Wei & Yonghui Zheng & Tiancheng Gong & Jie Yu & Xiaoxin Xu & Peng Yuan & Xiaoyan Li & Lu Tai & Haoran Yu & , 2020. "A highly CMOS compatible hafnia-based ferroelectric diode," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    2. Xiaowei Wang & Chao Zhu & Ya Deng & Ruihuan Duan & Jieqiong Chen & Qingsheng Zeng & Jiadong Zhou & Qundong Fu & Lu You & Song Liu & James H. Edgar & Peng Yu & Zheng Liu, 2021. "Van der Waals engineering of ferroelectric heterostructures for long-retention memory," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
    3. Fan Wu & He Tian & Yang Shen & Zhan Hou & Jie Ren & Guangyang Gou & Yabin Sun & Yi Yang & Tian-Ling Ren, 2022. "Vertical MoS2 transistors with sub-1-nm gate lengths," Nature, Nature, vol. 603(7900), pages 259-264, March.
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