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Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Author

Listed:
  • Jiabiao Chen

    (Nankai University)

  • Zhaochao Liu

    (Nankai University)

  • Xinyue Dong

    (Nankai University)

  • Zhansheng Gao

    (Nankai University)

  • Yuxuan Lin

    (Nankai University)

  • Yuyu He

    (Nankai University)

  • Yingnan Duan

    (Nankai University)

  • Tonghuai Cheng

    (Nankai University)

  • Zhengyang Zhou

    (Shanghai Institute of Ceramics, Chinese Academy of Sciences)

  • Huixia Fu

    (Chongqing University)

  • Feng Luo

    (Nankai University)

  • Jinxiong Wu

    (Nankai University)

Abstract

Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi2SiO5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi2SiO5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS2 as high-κ dielectrics and screening layers. The Bi2SiO5 gated MoS2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi2SiO5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.

Suggested Citation

  • Jiabiao Chen & Zhaochao Liu & Xinyue Dong & Zhansheng Gao & Yuxuan Lin & Yuyu He & Yingnan Duan & Tonghuai Cheng & Zhengyang Zhou & Huixia Fu & Feng Luo & Jinxiong Wu, 2023. "Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40123-1
    DOI: 10.1038/s41467-023-40123-1
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    References listed on IDEAS

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    1. Weiting Xu & Jiayang Jiang & Yujia Chen & Ning Tang & Chengbao Jiang & Shengxue Yang, 2024. "Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    2. Xiulian Fan & Jiali Yi & Bin Deng & Cong Zhou & Zejuan Zhang & Jia Yu & Weihan Li & Cheng Li & Guangcheng Wu & Xilong Zhou & Tulai Sun & Yihan Zhu & Jian Zhou & Juan Xia & Zenghui Wang & Keji Lai & Zh, 2025. "2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors," Nature Communications, Nature, vol. 16(1), pages 1-12, December.

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