Author
Listed:
- Hao-Yu Lan
(Purdue University
Purdue University)
- Chih-Pin Lin
(Purdue University
Purdue University
National Yang Ming Chiao Tung University)
- Lina Liu
(Purdue University)
- Jun Cai
(Purdue University
Purdue University)
- Zheng Sun
(Purdue University
Purdue University)
- Peng Wu
(Massachusetts Institute of Technology)
- Yuanqiu Tan
(Purdue University
Purdue University)
- Shao-Heng Yang
(Purdue University
Purdue University)
- Tuo-Hung Hou
(National Yang Ming Chiao Tung University)
- Joerg Appenzeller
(Purdue University
Purdue University)
- Zhihong Chen
(Purdue University
Purdue University)
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessive contact resistance due to ineffective or non-existent doping techniques hinders their technological readiness. Here, we unveil the doping mechanism of pure nitric oxide and demonstrate its effectiveness on wafer-scale grown monolayer and bilayer tungsten diselenide (1L- and 2L-WSe2) transistors, where doping bands induced by nitric oxide can realign the Schottky barrier and approach p-type unipolar transport. This doping approach, combined with a scaled high-κ dielectric, yields WSe2 transistors with high performance metrics. For monolayer WSe2, we achieved an on-state current of 300 μA/μm (at a drain-to-source voltage of –1 V and overdrive voltage of –0.8 V), contact resistance of 875 Ω·μm, peak transconductance of 400 μS/μm, and a subthreshold swing of 70 mV/dec, while preserving on/off ratios >109, minimal variability, and good stability over 24 days under moderate thermal conditions. For bilayer WSe2, the devices exhibit an on-state current of 448 μA/μm and contact resistance of 390 Ω·μm, further showcasing the scalability and effectiveness of the NO doping method. Our findings establish NO doping as a promising technique for realizing high-performance p-type 2D transistors and advancing next-generation ultra-scaled electronic devices.
Suggested Citation
Hao-Yu Lan & Chih-Pin Lin & Lina Liu & Jun Cai & Zheng Sun & Peng Wu & Yuanqiu Tan & Shao-Heng Yang & Tuo-Hung Hou & Joerg Appenzeller & Zhihong Chen, 2025.
"Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors,"
Nature Communications, Nature, vol. 16(1), pages 1-14, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-59423-9
DOI: 10.1038/s41467-025-59423-9
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