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Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction

Author

Listed:
  • Ralph El Hage

    (Université Paris-Saclay)

  • Vincent Humbert

    (Université Paris-Saclay)

  • Victor Rouco

    (Université Paris-Saclay)

  • Gabriel Sánchez-Santolino

    (Universidad Complutense de Madrid)

  • Aurelien Lagarrigue

    (Université Paris-Saclay)

  • Kevin Seurre

    (Université Paris-Saclay)

  • Santiago J. Carreira

    (Université Paris-Saclay)

  • Anke Sander

    (Université Paris-Saclay)

  • Jérôme Charliac

    (CNRS, Ecole Polytechnique)

  • Salvatore Mesoraca

    (Université Paris-Saclay)

  • Juan Trastoy

    (Université Paris-Saclay)

  • Javier Briatico

    (Université Paris-Saclay)

  • Jacobo Santamaría

    (Université Paris-Saclay
    Universidad Complutense de Madrid)

  • Javier E. Villegas

    (Université Paris-Saclay)

Abstract

Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history. This is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The exploited mechanism is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. The redox reaction is optically driven via an interplay between electrochemistry, photovoltaic effects and photo-assisted ion migration. Besides their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, in addition to facilitating low-dissipation connectivity, brings photo-memristive effects to the realm of superconducting electronics.

Suggested Citation

  • Ralph El Hage & Vincent Humbert & Victor Rouco & Gabriel Sánchez-Santolino & Aurelien Lagarrigue & Kevin Seurre & Santiago J. Carreira & Anke Sander & Jérôme Charliac & Salvatore Mesoraca & Juan Trast, 2023. "Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-38608-0
    DOI: 10.1038/s41467-023-38608-0
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    References listed on IDEAS

    as
    1. V. Garcia & S. Fusil & K. Bouzehouane & S. Enouz-Vedrenne & N. D. Mathur & A. Barthélémy & M. Bibes, 2009. "Giant tunnel electroresistance for non-destructive readout of ferroelectric states," Nature, Nature, vol. 460(7251), pages 81-84, July.
    2. Xiao Long & Huan Tan & Florencio Sánchez & Ignasi Fina & Josep Fontcuberta, 2021. "Non-volatile optical switch of resistance in photoferroelectric tunnel junctions," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    3. Bora, Leena V. & Mewada, Rajubhai K., 2017. "Visible/solar light active photocatalysts for organic effluent treatment: Fundamentals, mechanisms and parametric review," Renewable and Sustainable Energy Reviews, Elsevier, vol. 76(C), pages 1393-1421.
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