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Integrated dual-laser photonic chip for high-purity carrier generation enabling ultrafast terahertz wireless communications

Author

Listed:
  • Shi Jia

    (Technical University of Denmark, DK-2800, Kgs)

  • Mu-Chieh Lo

    (Universidad Carlos III de Madrid
    University College London)

  • Lu Zhang

    (KTH Royal Institute of Technology
    Zhejiang University)

  • Oskars Ozolins

    (KTH Royal Institute of Technology
    RISE Research Institutes of Sweden
    Riga Technical University)

  • Aleksejs Udalcovs

    (RISE Research Institutes of Sweden)

  • Deming Kong

    (Technical University of Denmark, DK-2800, Kgs)

  • Xiaodan Pang

    (KTH Royal Institute of Technology)

  • Robinson Guzman

    (Universidad Carlos III de Madrid)

  • Xianbin Yu

    (Zhejiang University)

  • Shilin Xiao

    (Shanghai Jiao Tong University)

  • Sergei Popov

    (KTH Royal Institute of Technology)

  • Jiajia Chen

    (KTH Royal Institute of Technology)

  • Guillermo Carpintero

    (Universidad Carlos III de Madrid)

  • Toshio Morioka

    (Technical University of Denmark, DK-2800, Kgs)

  • Hao Hu

    (Technical University of Denmark, DK-2800, Kgs)

  • Leif K. Oxenløwe

    (Technical University of Denmark, DK-2800, Kgs)

Abstract

Photonic generation of Terahertz (THz) carriers displays high potential for THz communications with a large tunable range and high modulation bandwidth. While many photonics-based THz generations have recently been demonstrated with discrete bulky components, their practical applications are significantly hindered by the large footprint and high energy consumption. Herein, we present an injection-locked heterodyne source based on generic foundry-fabricated photonic integrated circuits (PIC) attached to a uni-traveling carrier photodiode generating high-purity THz carriers. The generated THz carrier is tunable within the range of 0–1.4 THz, determined by the wavelength spacing between the two monolithically integrated distributed feedback (DFB) lasers. This scheme generates and transmits a 131 Gbits−1 net rate signal over a 10.7-m distance with −24 dBm emitted power at 0.4 THz. This monolithic dual-DFB PIC-based THz generation approach is a significant step towards fully integrated, cost-effective, and energy-efficient THz transmitters.

Suggested Citation

  • Shi Jia & Mu-Chieh Lo & Lu Zhang & Oskars Ozolins & Aleksejs Udalcovs & Deming Kong & Xiaodan Pang & Robinson Guzman & Xianbin Yu & Shilin Xiao & Sergei Popov & Jiajia Chen & Guillermo Carpintero & To, 2022. "Integrated dual-laser photonic chip for high-purity carrier generation enabling ultrafast terahertz wireless communications," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-29049-2
    DOI: 10.1038/s41467-022-29049-2
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    Cited by:

    1. Shahab Abdollahi & Mathieu Ladouce & Pablo Marin-Palomo & Martin Virte, 2024. "Agile THz-range spectral multiplication of frequency combs using a multi-wavelength laser," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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