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Microtesla Sensitivity and Noise of a Triple Collector Magnetotransistor

Author

Listed:
  • Amelichev V. V.
  • Tikhonov R. D.
  • Cheremisinov A. A.

Abstract

The sensitivity of a bipolar magnetotransistor with the base in a well has been studied in a microtesla magnetic field. The noise was experimentally measured to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or in a diffused well. The noise decreases in a diffused well. Acquiring an adequate understanding of the mechanism underlying the operation of the device should help to improve its magnetic sensitivity. A low velocity of surface recombination and an extraction of the injected electrons using a base–well ?-n junction determined the operating mode with the deviation of two charge carrier flows.

Suggested Citation

  • Amelichev V. V. & Tikhonov R. D. & Cheremisinov A. A., 2013. "Microtesla Sensitivity and Noise of a Triple Collector Magnetotransistor," Modern Applied Science, Canadian Center of Science and Education, vol. 7(11), pages 1-26, November.
    • Handle: RePEc:ibn:masjnl:v:7:y:2013:i:11:p:26
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    JEL classification:

    • R00 - Urban, Rural, Regional, Real Estate, and Transportation Economics - - General - - - General
    • Z0 - Other Special Topics - - General

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