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Experimental Optimization of growth Parameters of High Quality Green GaN Multiple Quantum Well by Metal-Organic Chemical Vapor Deposition

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Listed:
  • Feng Wen
  • Lirong Huang
  • Liangzhu Tong
  • Deming Liu

Abstract

The effects of grow parameters such as barrier thickness, flow ratio of group-III sources (TMIn/(TMIn+TMGa)), well temperature on the properties of green multiple quantum well (MQW) are investigated. The samples were grown by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HRXRD) and room temperature photoluminescence (PL) were employed to analyze the results. The PL and HRXRD images show that a green MQW of high quality, at long wavelength 550nm, was obtained by controlling the GaN buffer quality, well growth temperature, and flow ratio of group-III sources (TMIn/(TMIn+TMGa)).

Suggested Citation

  • Feng Wen & Lirong Huang & Liangzhu Tong & Deming Liu, 2010. "Experimental Optimization of growth Parameters of High Quality Green GaN Multiple Quantum Well by Metal-Organic Chemical Vapor Deposition," Modern Applied Science, Canadian Center of Science and Education, vol. 4(6), pages 1-49, June.
    • Handle: RePEc:ibn:masjnl:v:4:y:2010:i:6:p:49
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    JEL classification:

    • R00 - Urban, Rural, Regional, Real Estate, and Transportation Economics - - General - - - General
    • Z0 - Other Special Topics - - General

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