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Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

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  • David Lumbreras

    (Terrassa Industrial Electronics Group (TIEG), Department of Electronic Engineering, Polytechnic University of Catalonia, C/Colom, 1, 08222 Terrassa, Spain
    R&D Power Electronics, Circutor S.A., Vial de Sant Jordi, 08232 Viladecavalls, Spain)

  • Manel Vilella

    (Terrassa Industrial Electronics Group (TIEG), Department of Electronic Engineering, Polytechnic University of Catalonia, C/Colom, 1, 08222 Terrassa, Spain)

  • Jordi Zaragoza

    (Terrassa Industrial Electronics Group (TIEG), Department of Electronic Engineering, Polytechnic University of Catalonia, C/Colom, 1, 08222 Terrassa, Spain)

  • Néstor Berbel

    (Terrassa Industrial Electronics Group (TIEG), Department of Electronic Engineering, Polytechnic University of Catalonia, C/Colom, 1, 08222 Terrassa, Spain)

  • Josep Jordà

    (R&D Power Electronics, Circutor S.A., Vial de Sant Jordi, 08232 Viladecavalls, Spain)

  • Alfonso Collado

    (R&D Power Electronics, Circutor S.A., Vial de Sant Jordi, 08232 Viladecavalls, Spain)

Abstract

The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron-mobility transistors (GaN e-HEMTs) is particularly challenging due to their small size and high power capability. In this paper, we model, study and compare the different heat dissipation systems proposed for high power density GaN-based power converters. Two dissipation systems are analysed in detail: bottom-side dissipation using thermal vias and top-side dissipation using different thermal interface materials. The effectiveness of both dissipation techniques is analysed using MATLAB/Simulink and PLECS. Furthermore, the impact of the dissipation system on the parasitic elements of the converter is studied using advanced design systems (ADS). The experimental results of the GaN-based converters show the effectiveness of the analysed heat dissipation systems and how top-side cooled converters have the lowest parasitic inductance among the studied power converters.

Suggested Citation

  • David Lumbreras & Manel Vilella & Jordi Zaragoza & Néstor Berbel & Josep Jordà & Alfonso Collado, 2021. "Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion," Energies, MDPI, vol. 14(19), pages 1-28, October.
  • Handle: RePEc:gam:jeners:v:14:y:2021:i:19:p:6287-:d:648798
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    References listed on IDEAS

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    1. Baochao Wang & Shili Dong & Shanlin Jiang & Chun He & Jianhui Hu & Hui Ye & Xuezhen Ding, 2019. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs," Energies, MDPI, vol. 12(6), pages 1-13, March.
    2. Lisa Mitterhuber & René Hammer & Thomas Dengg & Jürgen Spitaler, 2020. "Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications," Energies, MDPI, vol. 13(9), pages 1-17, May.
    3. Loris Pace & Nadir Idir & Thierry Duquesne & Jean-Claude De Jaeger, 2021. "Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations," Energies, MDPI, vol. 14(5), pages 1-17, March.
    4. Zbigniew Waradzyn & Robert Stala & Andrzej Mondzik & Aleksander Skała & Adam Penczek, 2020. "GaN-Based DC-DC Resonant Boost Converter with Very High Efficiency and Voltage Gain Control," Energies, MDPI, vol. 13(23), pages 1-21, December.
    5. Zbigniew Kaczmarczyk & Marcin Kasprzak & Adam Ruszczyk & Kacper Sowa & Piotr Zimoch & Krzysztof Przybyła & Kamil Kierepka, 2021. "Inductive Power Transfer Subsystem for Integrated Motor Drive," Energies, MDPI, vol. 14(5), pages 1-14, March.
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    Cited by:

    1. Rajanand Patnaik Narasipuram & Subbarao Mopidevi, 2023. "A Novel Hybrid Control Strategy and Dynamic Performance Enhancement of a 3.3 kW GaN–HEMT-Based iL 2 C Resonant Full-Bridge DC–DC Power Converter Methodology for Electric Vehicle Charging Systems," Energies, MDPI, vol. 16(15), pages 1-22, August.

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