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Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Author

Listed:
  • Chih-Chiang Wu

    (Mechanical and Mechatronics Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan)

  • Ching-Yao Liu

    (Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Sandeep Anand

    (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)

  • Wei-Hua Chieng

    (Department of Mechanical Engineering, College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Edward-Yi Chang

    (Department of Material Science and Engineering College of Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan)

  • Arnab Sarkar

    (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)

Abstract

The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surging to a negative voltage during the turn off transition. The existing solutions for this problem in the literature produce additional drawbacks such as reducing the switching frequency or introducing many additional components. These drawbacks may outweigh the advantages of using a GaN HEMT over its silicon (Si) alternative. This paper proposes two innovative gate drive circuits for D-mode GaN HEMTs—namely the GaN-switching based cascode GaN HEMT and the modified GaN-switching based cascode GaN HEMT. In these schemes, the Si MOSFET in series with the D-mode GaN HEMT is always turned on during regular operation. The GaN HEMT is then switched on and off by using a charge pump based circuit and a conventional gate driver. Since the GaN HEMT is driven independently, the highly negative gate-to-source voltage surge during turn off is avoided, and in addition, high switching frequency operation is made possible. Only two diodes and one capacitor are used in each of the schemes. The application of the proposed circuits is experimentally demonstrated in a high voltage flyback converter, where more than 96% efficiency is obtained for 60 W output load.

Suggested Citation

  • Chih-Chiang Wu & Ching-Yao Liu & Sandeep Anand & Wei-Hua Chieng & Edward-Yi Chang & Arnab Sarkar, 2021. "Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter," Energies, MDPI, vol. 14(18), pages 1-26, September.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:18:p:5966-:d:639483
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    References listed on IDEAS

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    1. Rustam Kumar & Chih-Chiang Wu & Ching-Yao Liu & Yu-Lin Hsiao & Wei-Hua Chieng & Edward-Yi Chang, 2021. "Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter," Energies, MDPI, vol. 14(18), pages 1-23, September.
    2. Li-Chuan Tang & Shyr-Long Jeng & Edward-Yi Chang & Wei-Hua Chieng, 2021. "Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer," Energies, MDPI, vol. 14(12), pages 1-25, June.
    3. Zbigniew Waradzyn & Robert Stala & Andrzej Mondzik & Aleksander Skała & Adam Penczek, 2020. "GaN-Based DC-DC Resonant Boost Converter with Very High Efficiency and Voltage Gain Control," Energies, MDPI, vol. 13(23), pages 1-21, December.
    4. Chih-Chiang Wu & Ching-Yao Liu & Guo-Bin Wang & Yueh-Tsung Shieh & Wei-Hua Chieng & Edward Yi Chang, 2021. "A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization," Energies, MDPI, vol. 14(12), pages 1-23, June.
    5. You-Chen Weng & Chih-Chiang Wu & Edward Yi Chang & Wei-Hua Chieng, 2021. "Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor," Energies, MDPI, vol. 14(8), pages 1-16, April.
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    Cited by:

    1. Yueh-Tsung Shieh & Chih-Chiang Wu & Shyr-Long Jeng & Ching-Yao Liu & Shiang-Yu Hsieh & Chi-Chun Haung & Wen-Yuh Shieh & Wei-Hua Chieng & Edward-Yi Chang, 2023. "A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT," Energies, MDPI, vol. 16(16), pages 1-28, August.
    2. Ching-Yao Liu & Chih-Chiang Wu & Li-Chuan Tang & Yueh-Tsung Shieh & Wei-Hua Chieng & Edward-Yi Chang, 2023. "Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT," Energies, MDPI, vol. 16(9), pages 1-21, April.
    3. Yueh-Tsung Shieh & Ching-Yao Liu & Chih-Chiang Wu & Wei-Hua Chieng & Edward-Yi Chang, 2022. "Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier," Energies, MDPI, vol. 15(9), pages 1-21, April.
    4. Rustam Kumar & Chih-Chiang Wu & Ching-Yao Liu & Yu-Lin Hsiao & Wei-Hua Chieng & Edward-Yi Chang, 2021. "Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter," Energies, MDPI, vol. 14(18), pages 1-23, September.

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