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Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs

Author

Listed:
  • Loreine Makki

    (Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France)

  • Marc Anthony Mannah

    (Department of Electrical Engineering, School of Engineering, The International University of Beirut BIU, Beirut, Lebanon/Lebanese International University LIU, Bekaa, Lebanon)

  • Christophe Batard

    (Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France)

  • Nicolas Ginot

    (Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France)

  • Julien Weckbrodt

    (Department of Electrical Engineering, Université de Nantes, IETR, Site de la Chantrerie, 44306 Nantes, France)

Abstract

Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode (CM) currents. This paper will simulate, via ANSYS Q3D Extractor, the unforeseen parasitic effects of a pulse planar transformer integrated in a SiC MOSFET gate-driver card. Moreover, the pulse transformer will be ameliorated by adding distinctive shielding layers aiming to suppress CM noise effects and endure high dv/dt occurrences intending to validate experimental tests. The correlation between stray capacitance and dv/dt immunity results after shielding insertion will be reported.

Suggested Citation

  • Loreine Makki & Marc Anthony Mannah & Christophe Batard & Nicolas Ginot & Julien Weckbrodt, 2021. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs," Energies, MDPI, vol. 14(13), pages 1-16, June.
  • Handle: RePEc:gam:jeners:v:14:y:2021:i:13:p:3866-:d:583326
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    References listed on IDEAS

    as
    1. Milad Moradpour & Paolo Pirino & Michele Losito & Wulf-Toke Franke & Amit Kumar & Gianluca Gatto, 2020. "Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles," Energies, MDPI, vol. 13(14), pages 1-14, July.
    2. Alessandro La Ganga & Roberto Re & Paolo Guglielmi, 2021. "Input Parallel Output Series Structure of Planar Medium Frequency Transformers for 200 kW Power Converter: Model and Parameters Evaluation," Energies, MDPI, vol. 14(5), pages 1-20, March.
    3. Shan Yin & Yingzhe Wu & Yitao Liu & Xuewei Pan, 2019. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT," Energies, MDPI, vol. 12(23), pages 1-15, November.
    4. Hanyoung Bu & Younghoon Cho, 2020. "GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System," Energies, MDPI, vol. 13(4), pages 1-14, February.
    5. Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
    6. Jiangui Chen & Yan Li & Mei Liang, 2019. "A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs," Energies, MDPI, vol. 12(9), pages 1-14, April.
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