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Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Author

Listed:
  • Shan Yin

    (Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
    Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China
    Current address: 596 Yinhe Road, Shuangliu District, Chegndu 610200, Sichuan, China.)

  • Yingzhe Wu

    (School of Aeronautics and Astronautics, University of Electronic Science and Technology of China, Chengdu 611731, China)

  • Yitao Liu

    (College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen 518060, China)

  • Xuewei Pan

    (School of Mechanical Engineering and Automation, Harbin Institute of Technology, Shenzhen 518055, China)

Abstract

Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

Suggested Citation

  • Shan Yin & Yingzhe Wu & Yitao Liu & Xuewei Pan, 2019. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT," Energies, MDPI, vol. 12(23), pages 1-15, November.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:23:p:4546-:d:292234
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    References listed on IDEAS

    as
    1. Yitao Liu & Ching-Ming Lai, 2018. "LCL Filter Design with EMI Noise Consideration for Grid-Connected Inverter," Energies, MDPI, vol. 11(7), pages 1-14, June.
    2. Gianluca Brando & Adolfo Dannier & Andrea Del Pizzo & Marino Coppola, 2017. "An All-Electric-Aircraft Tailored SiC-Based Power Factor Correction Converter with Adaptive DC-Link Regulator," Energies, MDPI, vol. 10(8), pages 1-14, August.
    3. Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
    4. Jiangui Chen & Yan Li & Mei Liang, 2019. "A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs," Energies, MDPI, vol. 12(9), pages 1-14, April.
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    Cited by:

    1. Héctor Sarnago & Óscar Lucía & Iulian O. Popa & José M. Burdío, 2021. "Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion," Energies, MDPI, vol. 14(9), pages 1-10, April.
    2. Juan Carlos Iglesias-Rojas & Erick Velázquez-Lozada & Roberto Baca-Arroyo, 2022. "Online Failure Diagnostic in Full-Bridge Module for Optimum Setup of an IGBT-Based Multilevel Inverter," Energies, MDPI, vol. 15(14), pages 1-14, July.
    3. Loreine Makki & Marc Anthony Mannah & Christophe Batard & Nicolas Ginot & Julien Weckbrodt, 2021. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs," Energies, MDPI, vol. 14(13), pages 1-16, June.

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