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Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles

Author

Listed:
  • Milad Moradpour

    (Department of Electrical and Electronic Engineering (DIEE), University of Cagliari (UniCa), 09123 Cagliari, Italy)

  • Paolo Pirino

    (Department of Electrical and Electronic Engineering (DIEE), University of Cagliari (UniCa), 09123 Cagliari, Italy)

  • Michele Losito

    (Department of Electrical and Electronic Engineering (DIEE), University of Cagliari (UniCa), 09123 Cagliari, Italy)

  • Wulf-Toke Franke

    (Centre for Industrial Electronics, University of Southern Denmark, 6400 Sønderborg, Denmark)

  • Amit Kumar

    (Department of Electrical and Electronic Engineering (DIEE), University of Cagliari (UniCa), 09123 Cagliari, Italy)

  • Gianluca Gatto

    (Department of Electrical and Electronic Engineering (DIEE), University of Cagliari (UniCa), 09123 Cagliari, Italy)

Abstract

DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide (SiC) provide higher frequency and lower power loss, however, their high di/dt and dv/dt transients result in higher electromagnetic interference (EMI). On the other hand, some gate driver parameters such as gate resistor ( R G ) have a contradictory effect on efficiency ( η ) and EMI. The idea of this paper is to investigate the values of these parameters using a multi-objective optimization method to optimize η and EMI at the same time. To this aim, first, the effect of high and low side R G on η and EMI in the half-bridge configuration is studied. Then, the objective functions of the optimization problem are obtained using a numerical regression method on the basis of the experimental tests. Then, the values of the gate resistors are obtained by solving the multi-objective optimization problem. Finally, η and EMI of the converter in the optimum gate resistor design are compared to those in the conventional design to validate the effectiveness of the proposed design approach.

Suggested Citation

  • Milad Moradpour & Paolo Pirino & Michele Losito & Wulf-Toke Franke & Amit Kumar & Gianluca Gatto, 2020. "Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles," Energies, MDPI, vol. 13(14), pages 1-14, July.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:14:p:3720-:d:386871
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    References listed on IDEAS

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    1. Haider Zaman & Xiaohua Wu & Xiancheng Zheng & Shahbaz Khan & Husan Ali, 2018. "Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter," Energies, MDPI, vol. 11(11), pages 1-19, November.
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    Cited by:

    1. Loreine Makki & Marc Anthony Mannah & Christophe Batard & Nicolas Ginot & Julien Weckbrodt, 2021. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs," Energies, MDPI, vol. 14(13), pages 1-16, June.
    2. Héctor Sarnago & Óscar Lucía & Iulian O. Popa & José M. Burdío, 2021. "Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion," Energies, MDPI, vol. 14(9), pages 1-10, April.

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