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ZnSeGrowth on Lattice-MatchedInxGa1-xAsSubstrates

Author

Listed:
  • S. Heun

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • R. Lantier

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • J. J. Paggel

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • L. Sorba

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • S. Rubini

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • B. Bonanni

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • A. Franciosi

    (Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy)

  • M. Lomascolo

    (Dipartimento di Scienza dei Materiali, Università di Lecce, Via Arnesano, I-73100 Lecce, Italy)

  • R. Cingolani

    (Dipartimento di Scienza dei Materiali, Università di Lecce, Via Arnesano, I-73100 Lecce, Italy)

  • J.-M. Bonard

    (Institut de Micro- et Optoélectronique, Département de Physique, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland)

  • J.-D. Ganière

    (Institut de Micro- et Optoélectronique, Département de Physique, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland)

Abstract

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matchedInxGa1-xAsbuffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values ofxand ternary-layer thickness, the partial character of the strain relaxation within the III–V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

Suggested Citation

  • S. Heun & R. Lantier & J. J. Paggel & L. Sorba & S. Rubini & B. Bonanni & A. Franciosi & M. Lomascolo & R. Cingolani & J.-M. Bonard & J.-D. Ganière, 1998. "ZnSeGrowth on Lattice-MatchedInxGa1-xAsSubstrates," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(03n04), pages 693-700.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x98001055
    DOI: 10.1142/S0218625X98001055
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    Cited by:

    1. Frappat, L. & Sciarrino, A., 2005. "Sum rules for free energy and frequency distribution of DNA dinucleotides," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 351(2), pages 448-460.

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    Keywords

    ; 68.35; 68.55; 73.40.L; 79.60.E;
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