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Optimal Control of a Chemical Vapor Deposition Reactor

Author

Listed:
  • A. Friedman

    (University of Minnesota)

  • B. Hu

    (University of Notre Dame)

Abstract

We study a simple model of chemical vapor deposition on a silicon wafer. The control is the flux of chemical species, and the objective is to grow the semiconductor film so that its surface attains a prescribed profile as nearly as possible. The surface is spatially fast oscillating due to the small feature scale, and therefore the problem is formulated in terms of its homogenized approximation. We prove that the optimal control is bang-bang, and we use this information to develop a numerical scheme for computing the optimal control.

Suggested Citation

  • A. Friedman & B. Hu, 1998. "Optimal Control of a Chemical Vapor Deposition Reactor," Journal of Optimization Theory and Applications, Springer, vol. 97(3), pages 623-644, June.
  • Handle: RePEc:spr:joptap:v:97:y:1998:i:3:d:10.1023_a:1022694210246
    DOI: 10.1023/A:1022694210246
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    Cited by:

    1. Vicente, Luis N., 2002. "Local analysis of a new multipliers method," European Journal of Operational Research, Elsevier, vol. 143(2), pages 432-451, December.

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