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Nanophotonic Pockels modulators on a silicon nitride platform

Author

Listed:
  • Koen Alexander

    (Ghent University-imec
    Ghent University)

  • John P. George

    (Ghent University-imec
    Ghent University
    Ghent University)

  • Jochem Verbist

    (Ghent University-imec
    Ghent University
    Ghent University-imec)

  • Kristiaan Neyts

    (Ghent University
    Ghent University)

  • Bart Kuyken

    (Ghent University-imec
    Ghent University)

  • Dries Van Thourhout

    (Ghent University-imec
    Ghent University)

  • Jeroen Beeckman

    (Ghent University
    Ghent University)

Abstract

Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (α ≈ 1 dB cm−1). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.

Suggested Citation

  • Koen Alexander & John P. George & Jochem Verbist & Kristiaan Neyts & Bart Kuyken & Dries Van Thourhout & Jeroen Beeckman, 2018. "Nanophotonic Pockels modulators on a silicon nitride platform," Nature Communications, Nature, vol. 9(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05846-6
    DOI: 10.1038/s41467-018-05846-6
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