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PZT optical memristors

Author

Listed:
  • Chenlei Li

    (Zijingang Campus)

  • Hongyan Yu

    (Hangzhou
    King Abdullah University of Science and Technology (KAUST))

  • Tao Shu

    (Zijingang Campus)

  • Yueyang Zhang

    (Zijingang Campus)

  • Chengfeng Wen

    (Zijingang Campus)

  • Hengzhen Cao

    (Zijingang Campus)

  • Jin Xie

    (Zijingang Campus)

  • Hanwen Li

    (Zijingang Campus)

  • Zixu Xu

    (Zijingang Campus)

  • Gong Zhang

    (Zijingang Campus)

  • Zejie Yu

    (Zijingang Campus)

  • Huan Li

    (Zijingang Campus)

  • Liu Liu

    (Zijingang Campus)

  • Yaocheng Shi

    (Zijingang Campus)

  • Feng Qiu

    (Hangzhou)

  • Daoxin Dai

    (Zijingang Campus
    Zhejiang University)

Abstract

Optical memristors represent a monumental leap in the fusion of photonics and electronics for neuromorphic computing and artificial intelligence. Here, we reveal the first lead zirconate titanate (PZT) optical memristor, working with a paradigm of functional duality: non-volatile setting and ultrafast volatile modulation via the Pockels effect. Fine-tuning and large modulation depth are achieved with an index change of 4.6 × 10−3 when setting above a threshold voltage Vth and the switching energy is 12.3 pJ only. The non-volatility is highly stable even with >100,000 cycles. Sub-nanosecond volatile modulation (48 Gbps, 432 fJ/bit) is realized with high efficiency (VπL ~ 0.5 V·cm) via the strong Pockels effect below Vth. Our wafer-scale manufacturing process shows great potential for mass production. The present PZT optical memristors bridge the gap between high-speed photonics and non-volatile memory, offering transformative potential for high-speed and energy-efficient optical interconnects, quantum computing, neural networks, in-memory computing, and brain-like architecture.

Suggested Citation

  • Chenlei Li & Hongyan Yu & Tao Shu & Yueyang Zhang & Chengfeng Wen & Hengzhen Cao & Jin Xie & Hanwen Li & Zixu Xu & Gong Zhang & Zejie Yu & Huan Li & Liu Liu & Yaocheng Shi & Feng Qiu & Daoxin Dai, 2025. "PZT optical memristors," Nature Communications, Nature, vol. 16(1), pages 1-13, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-61536-0
    DOI: 10.1038/s41467-025-61536-0
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