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Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

Author

Listed:
  • Michael Zürch

    (University of California at Berkeley)

  • Hung-Tzu Chang

    (University of California at Berkeley)

  • Lauren J. Borja

    (University of California at Berkeley)

  • Peter M. Kraus

    (University of California at Berkeley)

  • Scott K. Cushing

    (University of California at Berkeley)

  • Andrey Gandman

    (University of California at Berkeley
    Present address: Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000, Israel)

  • Christopher J. Kaplan

    (University of California at Berkeley)

  • Myoung Hwan Oh

    (University of California at Berkeley
    Lawrence Berkeley National Laboratory)

  • James S. Prell

    (University of California at Berkeley
    Present address: Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, USA)

  • David Prendergast

    (The Molecular Foundry, Lawrence Berkeley National Laboratory)

  • Chaitanya D. Pemmaraju

    (The Molecular Foundry, Lawrence Berkeley National Laboratory
    Theory Institute for Materials and Energy Spectroscopies, SLAC National Accelerator Laboratory)

  • Daniel M. Neumark

    (University of California at Berkeley
    Lawrence Berkeley National Laboratory)

  • Stephen R. Leone

    (University of California at Berkeley
    Lawrence Berkeley National Laboratory
    University of California)

Abstract

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

Suggested Citation

  • Michael Zürch & Hung-Tzu Chang & Lauren J. Borja & Peter M. Kraus & Scott K. Cushing & Andrey Gandman & Christopher J. Kaplan & Myoung Hwan Oh & James S. Prell & David Prendergast & Chaitanya D. Pemma, 2017. "Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium," Nature Communications, Nature, vol. 8(1), pages 1-11, August.
  • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15734
    DOI: 10.1038/ncomms15734
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    Cited by:

    1. Tasleem, Sehar & Tahir, Muhammad, 2020. "Current trends in strategies to improve photocatalytic performance of perovskites materials for solar to hydrogen production," Renewable and Sustainable Energy Reviews, Elsevier, vol. 132(C).

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