Author
Listed:
- F. Y. Bruno
(Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau)
- M. N. Grisolia
(Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau)
- C. Visani
(Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau)
- S. Valencia
(Helmholtz-Zentrum-Berlin für Materialen und Energie)
- M. Varela
(GFMC, Universidad Complutense Madrid
Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid
Oak Ridge National Laboratory)
- R. Abrudan
(Helmholtz-Zentrum-Berlin für Materialen und Energie
Institut für Experimentalphysik/Festkörperphysik, Ruhr-Universität Bochum)
- J. Tornos
(GFMC, Universidad Complutense Madrid
Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid)
- A. Rivera-Calzada
(GFMC, Universidad Complutense Madrid
Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid)
- A. A. Ünal
(Helmholtz-Zentrum-Berlin für Materialen und Energie)
- S. J. Pennycook
(The University of Tennessee)
- Z. Sefrioui
(GFMC, Universidad Complutense Madrid
Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid)
- C. Leon
(GFMC, Universidad Complutense Madrid
Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid)
- J. E. Villegas
(Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau)
- J. Santamaria
(GFMC, Universidad Complutense Madrid
Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense de Madrid)
- A. Barthélémy
(Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau)
- M. Bibes
(Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau)
Abstract
At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO3 (LFO) and ferromagnetic La0.7Sr0.3MnO3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.
Suggested Citation
F. Y. Bruno & M. N. Grisolia & C. Visani & S. Valencia & M. Varela & R. Abrudan & J. Tornos & A. Rivera-Calzada & A. A. Ünal & S. J. Pennycook & Z. Sefrioui & C. Leon & J. E. Villegas & J. Santamaria , 2015.
"Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping,"
Nature Communications, Nature, vol. 6(1), pages 1-9, May.
Handle:
RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7306
DOI: 10.1038/ncomms7306
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