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Exploring atomic defects in molybdenum disulphide monolayers

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  • Jinhua Hong

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

  • Zhixin Hu

    (Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China)

  • Matt Probert

    (University of York, Heslington, York YO10 5DD, UK)

  • Kun Li

    (Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST))

  • Danhui Lv

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

  • Xinan Yang

    (Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter)

  • Lin Gu

    (Instituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matter)

  • Nannan Mao

    (CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology
    Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University)

  • Qingliang Feng

    (CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology)

  • Liming Xie

    (CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology)

  • Jin Zhang

    (Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University)

  • Dianzhong Wu

    (Peking University)

  • Zhiyong Zhang

    (Peking University)

  • Chuanhong Jin

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

  • Wei Ji

    (Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China
    Collaborative Innovation Center of Advanced Microstructures, Shanghai Jiao Tong University)

  • Xixiang Zhang

    (Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST))

  • Jun Yuan

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University
    University of York, Heslington, York YO10 5DD, UK)

  • Ze Zhang

    (State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang University)

Abstract

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

Suggested Citation

  • Jinhua Hong & Zhixin Hu & Matt Probert & Kun Li & Danhui Lv & Xinan Yang & Lin Gu & Nannan Mao & Qingliang Feng & Liming Xie & Jin Zhang & Dianzhong Wu & Zhiyong Zhang & Chuanhong Jin & Wei Ji & Xixia, 2015. "Exploring atomic defects in molybdenum disulphide monolayers," Nature Communications, Nature, vol. 6(1), pages 1-8, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7293
    DOI: 10.1038/ncomms7293
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    Cited by:

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    3. Biswajit Datta & Mandeep Khatoniar & Prathmesh Deshmukh & Félix Thouin & Rezlind Bushati & Simone Liberato & Stephane Kena Cohen & Vinod M. Menon, 2022. "Highly nonlinear dipolar exciton-polaritons in bilayer MoS2," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    4. Song Li & Gergő Thiering & Péter Udvarhelyi & Viktor Ivády & Adam Gali, 2022. "Carbon defect qubit in two-dimensional WS2," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    5. Jie Xu & Xiong-Xiong Xue & Gonglei Shao & Changfei Jing & Sheng Dai & Kun He & Peipei Jia & Shun Wang & Yifei Yuan & Jun Luo & Jun Lu, 2023. "Atomic-level polarization in electric fields of defects for electrocatalysis," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    6. Jian Zhou & Chunchen Zhang & Li Shi & Xiaoqing Chen & Tae Soo Kim & Minseung Gyeon & Jian Chen & Jinlan Wang & Linwei Yu & Xinran Wang & Kibum Kang & Emanuele Orgiu & Paolo Samorì & Kenji Watanabe & T, 2022. "Non-invasive digital etching of van der Waals semiconductors," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    7. Zhaojun Li & Hope Bretscher & Yunwei Zhang & Géraud Delport & James Xiao & Alpha Lee & Samuel D. Stranks & Akshay Rao, 2021. "Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    8. Yeonghun Lee & Yaoqiao Hu & Xiuyao Lang & Dongwook Kim & Kejun Li & Yuan Ping & Kai-Mei C. Fu & Kyeongjae Cho, 2022. "Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
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    12. Yi Wan & En Li & Zhihao Yu & Jing-Kai Huang & Ming-Yang Li & Ang-Sheng Chou & Yi-Te Lee & Chien-Ju Lee & Hung-Chang Hsu & Qin Zhan & Areej Aljarb & Jui-Han Fu & Shao-Pin Chiu & Xinran Wang & Juhn-Jong, 2022. "Low-defect-density WS2 by hydroxide vapor phase deposition," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    13. Yanfei Zhao & Mukesh Tripathi & Kristiāns Čerņevičs & Ahmet Avsar & Hyun Goo Ji & Juan Francisco Gonzalez Marin & Cheol-Yeon Cheon & Zhenyu Wang & Oleg V. Yazyev & Andras Kis, 2023. "Electrical spectroscopy of defect states and their hybridization in monolayer MoS2," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    14. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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