Author
Listed:
- Xingan Jiang
(Ningbo University of Technology)
- Muzhi Li
(Changsha University of Science & Technology)
- Yuanyuan Cui
(Beijing Institute of Technology)
- Xiao Wu
(Fuzhou University)
- Zunyi Deng
(Beijing Institute of Technology)
- Xiangping Zhang
(Beijing Institute of Technology
Shenzhen)
- Jianming Deng
(Huizhou)
- Xiaolei Wang
(Beijing University of Technology)
- Dongdong Zhang
(Ningbo University of Technology)
- Xiangdong Yang
(Ningbo University of Technology)
- Zhuoyin Peng
(Changsha University of Science & Technology)
- Zhao Liang
(Ningbo University of Technology)
- Xueyun Wang
(Beijing Institute of Technology)
- Weiyou Yang
(Ningbo University of Technology)
Abstract
The deterministic control of ferroelectric polarization via an external field is critical for advancing the technologies of modern information storage. Conventionally, reversible and cyclic polarization switching in ferroelectric materials requires bipolar electric fields. The present work demonstrates the efficient reversible and cyclic ferroelectric domain switching under a unipolar electric field in van der Waals ferroelectric CuInP2S6, enabled by Cu-ion migration across van der Waals gaps. It further unveils the remarkable “shape memory” effect of manipulated domains, and the programmable domain patterning under a unipolar electric field. These findings not only deepen the understanding of ferro-ionic coupling mechanism, but also provide insights into the origin of multiple polarization states, negative capacitance, and the quantized charge transport, paving the way for emerging storage technologies and low-power neuromorphic applications.
Suggested Citation
Xingan Jiang & Muzhi Li & Yuanyuan Cui & Xiao Wu & Zunyi Deng & Xiangping Zhang & Jianming Deng & Xiaolei Wang & Dongdong Zhang & Xiangdong Yang & Zhuoyin Peng & Zhao Liang & Xueyun Wang & Weiyou Yang, 2025.
"Unidirectional electric field enables reversible ferroelectric domain engineering,"
Nature Communications, Nature, vol. 16(1), pages 1-9, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-63049-2
DOI: 10.1038/s41467-025-63049-2
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