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Current-induced self-switching of perpendicular magnetization in CoPt single layer

Author

Listed:
  • Liang Liu

    (National University of Singapore)

  • Chenghang Zhou

    (National University of Singapore)

  • Tieyang Zhao

    (National University of Singapore)

  • Bingqing Yao

    (Nanyang Technological University)

  • Jing Zhou

    (National University of Singapore)

  • Xinyu Shu

    (National University of Singapore)

  • Shaohai Chen

    (National University of Singapore)

  • Shu Shi

    (National University of Singapore)

  • Shibo Xi

    (National University of Singapore
    Institute of Sustainability for Chemicals, Energy and Environment, A*STAR (Agency for Science, Technology and Research))

  • Da Lan

    (National University of Singapore)

  • Weinan Lin

    (National University of Singapore)

  • Qidong Xie

    (National University of Singapore)

  • Lizhu Ren

    (National University of Singapore)

  • Zhaoyang Luo

    (National University of Singapore)

  • Chao Sun

    (National University of Singapore)

  • Ping Yang

    (National University of Singapore
    National University of Singapore)

  • Er-Jia Guo

    (Chinese Academy of Sciences)

  • Zhili Dong

    (Nanyang Technological University)

  • Aurelien Manchon

    (Aix-Marseille Univ, CNRS, CINaM)

  • Jingsheng Chen

    (National University of Singapore
    National University of Singapore
    National University of Singapore
    Institute of Material Research and Engineering, A*STAR)

Abstract

All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20

Suggested Citation

  • Liang Liu & Chenghang Zhou & Tieyang Zhao & Bingqing Yao & Jing Zhou & Xinyu Shu & Shaohai Chen & Shu Shi & Shibo Xi & Da Lan & Weinan Lin & Qidong Xie & Lizhu Ren & Zhaoyang Luo & Chao Sun & Ping Yan, 2022. "Current-induced self-switching of perpendicular magnetization in CoPt single layer," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31167-w
    DOI: 10.1038/s41467-022-31167-w
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    References listed on IDEAS

    as
    1. Ioan Mihai Miron & Kevin Garello & Gilles Gaudin & Pierre-Jean Zermatten & Marius V. Costache & Stéphane Auffret & Sébastien Bandiera & Bernard Rodmacq & Alain Schuhl & Pietro Gambardella, 2011. "Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection," Nature, Nature, vol. 476(7359), pages 189-193, August.
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    Cited by:

    1. Fen Xue & Shy-Jay Lin & Mingyuan Song & William Hwang & Christoph Klewe & Chien-Min Lee & Emrah Turgut & Padraic Shafer & Arturas Vailionis & Yen-Lin Huang & Wilman Tsai & Xinyu Bao & Shan X. Wang, 2023. "Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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