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Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge

Author

Listed:
  • Liyan Dai

    (Xi’an Jiaotong University)

  • Jinyan Zhao

    (Xi’an Jiaotong University)

  • Jingrui Li

    (Xi’an Jiaotong University)

  • Bohan Chen

    (Xi’an Jiaotong University)

  • Shijie Zhai

    (Xi’an Jiaotong University)

  • Zhongying Xue

    (Chinese Academy of Science)

  • Zengfeng Di

    (Chinese Academy of Science)

  • Boyuan Feng

    (Chinese Academy of Sciences)

  • Yanxiao Sun

    (Xi’an Jiaotong University)

  • Yunyun Luo

    (Xi’an Jiaotong University)

  • Ming Ma

    (Xi’an Jiaotong University)

  • Jie Zhang

    (Xi’an Jiaotong University)

  • Sunan Ding

    (Chinese Academy of Sciences)

  • Libo Zhao

    (Xi’an Jiaotong University)

  • Zhuangde Jiang

    (Xi’an Jiaotong University)

  • Wenbo Luo

    (University of Electronic Science and Technology of China)

  • Yi Quan

    (Xi’an Jiaotong University
    Xidian University)

  • Jutta Schwarzkopf

    (Leibniz-Institut für Kristallzüchtung)

  • Thomas Schroeder

    (Leibniz-Institut für Kristallzüchtung)

  • Zuo-Guang Ye

    (Simon Fraser University)

  • Ya-Hong Xie

    (University of California)

  • Wei Ren

    (Xi’an Jiaotong University)

  • Gang Niu

    (Xi’an Jiaotong University)

Abstract

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO3 (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

Suggested Citation

  • Liyan Dai & Jinyan Zhao & Jingrui Li & Bohan Chen & Shijie Zhai & Zhongying Xue & Zengfeng Di & Boyuan Feng & Yanxiao Sun & Yunyun Luo & Ming Ma & Jie Zhang & Sunan Ding & Libo Zhao & Zhuangde Jiang &, 2022. "Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30724-7
    DOI: 10.1038/s41467-022-30724-7
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