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Impedance Spectroscopy for Interface Trap Effects Evaluation in Dopant-Free Silicon Solar Cells

Author

Listed:
  • Ilaria Matacena

    (Department of Electrical Engineering and Information Technology, University of Naples Federico II, 80125 Napoli, Italy)

  • Laura Lancellotti

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Eugenia Bobeico

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Iurie Usatii

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Marco della Noce

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Elena Santoro

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Pietro Scognamiglio

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Lucia V. Mercaldo

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Paola Delli Veneri

    (ENEA Portici Research Center, 80055 Naples, Italy)

  • Santolo Daliento

    (Department of Electrical Engineering and Information Technology, University of Naples Federico II, 80125 Napoli, Italy)

Abstract

This work investigates the effect of interface traps on the impedance spectra of dopant-free silicon solar cells. The studied device consists of a crystalline silicon absorber with an a-Si:H/MoOx/ITO stack as the front passivating hole-collecting contact and an a-Si:H/LiF/Al stack as the rear passivating electron-collecting contact. Experimental measurements, including illuminated current–voltage (I–V) characteristics and impedance spectroscopy, were performed on the fabricated devices and after a soft annealing treatment. The annealed cells exhibit an increased open-circuit voltage and a larger Nyquist plot radius. To interpret these results, a numerical model was developed in a TCAD environment. Simulations reveal that traps located at the p/i interface (MoOx/i-a-Si:H) significantly affect the impedance spectra, with higher trap concentrations leading to smaller Nyquist plot circumferences. The numerical impedance curves were aligned to the experimental data, enabling extraction of the interfacial traps concentration. The results highlight the sensitivity of impedance spectroscopy to interfacial quality and confirm that the performance improvement after soft annealing is primarily due to reduced defect density at the MoOx/i-a-Si:H interface.

Suggested Citation

  • Ilaria Matacena & Laura Lancellotti & Eugenia Bobeico & Iurie Usatii & Marco della Noce & Elena Santoro & Pietro Scognamiglio & Lucia V. Mercaldo & Paola Delli Veneri & Santolo Daliento, 2025. "Impedance Spectroscopy for Interface Trap Effects Evaluation in Dopant-Free Silicon Solar Cells," Energies, MDPI, vol. 18(17), pages 1-12, August.
    • Handle: RePEc:gam:jeners:v:18:y:2025:i:17:p:4558-:d:1735960
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    References listed on IDEAS

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    1. Mehmood, Haris & Nasser, Hisham & Tauqeer, Tauseef & Turan, Raşit, 2019. "Simulation of silicon heterostructure solar cell featuring dopant-free carrier-selective molybdenum oxide and titanium oxide contacts," Renewable Energy, Elsevier, vol. 143(C), pages 359-367.
    2. Muhammad Quddamah Khokhar & Shahzada Qamar Hussain & Duy Phong Pham & Sunhwa Lee & Hyeongsik Park & Youngkuk Kim & Eun-Chel Cho & Junsin Yi, 2020. "Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer," Energies, MDPI, vol. 13(7), pages 1-12, April.
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