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Investigations on Bi Doped Cu 2 Se Prepared by Solid State Reaction Technique for Thermoelectric Applications

Author

Listed:
  • Chaithanya Purushottam Bhat

    (Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India)

  • Anusha

    (Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India)

  • Aninamol Ani

    (Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India)

  • U. Deepika Shanubhogue

    (Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India)

  • P. Poornesh

    (Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India)

  • Ashok Rao

    (Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India)

  • Saikat Chattopadhyay

    (Department of Physics, School of Basic Sciences, Manipal University Jaipur, Jaipur 303007, Rajasthan, India)

Abstract

The influence of Bi doping on the structural and thermoelectric properties of Cu 2 Se is presented in this work. Cu 2−x Bi x Se (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu 2−x Bi x Se samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu 2−x Bi x Se sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu 2−x Bi x Se samples. At 700 K, the Cu 1.988 Bi 0.012 Se sample has the highest power factor of 1474 μWm −1 K −2 , showing great potential in developing high-performance Cu 2 Se based thermoelectric materials.

Suggested Citation

  • Chaithanya Purushottam Bhat & Anusha & Aninamol Ani & U. Deepika Shanubhogue & P. Poornesh & Ashok Rao & Saikat Chattopadhyay, 2023. "Investigations on Bi Doped Cu 2 Se Prepared by Solid State Reaction Technique for Thermoelectric Applications," Energies, MDPI, vol. 16(7), pages 1-15, March.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:7:p:3010-:d:1107267
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