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Substrate temperature effect on transparent heat reflecting nanocrystalline ITO films prepared by electron beam evaporation

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  • Fallah, Hamid Reza
  • Ghasemi varnamkhasti, Mohsen
  • Vahid, Mohammad Javad

Abstract

In this study, indium tin oxide (ITO) thin films were preparedon glass substrate by electron beam evaporation technique and then were annealed in air atmosphere at 350 °C for 30 min. Increasing substrate temperature (Ts) from 25 to 380°°C reduced sheet resistance of ITO thin films from 150(Ω/□) to 14(Ω/□). The UV-visible-near IR transmittance and reflectance spectra were also confirmed that the substrate temperature has significant effect on the properties of heat reflecting thin films. High transparency (83%) over the visible wavelength region of spectrum and (over 90%) reflectance in near-IR region were obtained at Ts = 300° C. Plasma wavelength, carrier concentrations (ne) and refractive index of the layer were also calculated. The allowed direct band gap at the temperature range 100–300° C was estimated to be in the range 3.71–3.89 eV. Band gap widening due to increase in substrate temperature was observed and is explained on the basis of Burstein-Moss shift. XRD patterns showed that the films were polycrystalline. High quality crystalline thin films with grain size of about 40 nm were obtained.

Suggested Citation

  • Fallah, Hamid Reza & Ghasemi varnamkhasti, Mohsen & Vahid, Mohammad Javad, 2010. "Substrate temperature effect on transparent heat reflecting nanocrystalline ITO films prepared by electron beam evaporation," Renewable Energy, Elsevier, vol. 35(7), pages 1527-1530.
    • Handle: RePEc:eee:renene:v:35:y:2010:i:7:p:1527-1530
    DOI: 10.1016/j.renene.2009.10.034
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