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Piezoelectric photo-thermal study of GaAs single-quantum well embedded in GaAs/AlAs short-period superlattlices

Author

Listed:
  • Wang, P.
  • Nakagawa, T.
  • Fukuyama, A.
  • Akashi, Y.
  • Fujiwara, K.
  • Ikari, T.

Abstract

The piezoelectric photo-thermal (PPT) and the surface photo-voltage (SPV) spectra of GaAs/AlAs short-period superlattices (SPS)-confined GaAs single-quantum well (SQW) were measured. The electron nonradiative transitions within GaAs-SQW and subband of SPS were observed in the room-temperature PPT spectrum. At low temperature (81K), the PPT and SPV peaks originated from the exciton transition of e1-hh1 and e1-lh1 within GaAs-SQW were observed. These peak intensities showed the opposite behavior followed by a photo-quenching (PQ) of EL2 existing in GaAs substrate. It was found that EL2 in the substrate exerted an influence on the carrier transition mechanisms within GaAs-SQW and the electron nonradiative paths through EL2 were clearly discussed by the PPT and SPV measurements.

Suggested Citation

  • Wang, P. & Nakagawa, T. & Fukuyama, A. & Akashi, Y. & Fujiwara, K. & Ikari, T., 2008. "Piezoelectric photo-thermal study of GaAs single-quantum well embedded in GaAs/AlAs short-period superlattlices," Renewable Energy, Elsevier, vol. 33(2), pages 304-308.
  • Handle: RePEc:eee:renene:v:33:y:2008:i:2:p:304-308
    DOI: 10.1016/j.renene.2007.05.010
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