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18.5% AM1.5 efficiency GaAs solar cell grown by metal organic vapor phase epitaxy: a first step to realize III–V multi-junction cells

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Listed:
  • Zaouk, A.
  • Rudra, A.
  • Basmaji, P.
  • Carlin, J.F.
  • Gibart, P.

Abstract

p-GaAs/n-GaAs single bandgap solar cells with a GaAs1−xAlxAs window layer have been grown by metal organic vapor phase epitaxy (M.O.V.P.E.). This is the first step to realize a cascade solar cell with a tunnel junction in order to increase the efficiency. The conversion efficiency reached was 18.6% at AM1.5 and a fill factor of 81% was measured.

Suggested Citation

  • Zaouk, A. & Rudra, A. & Basmaji, P. & Carlin, J.F. & Gibart, P., 1992. "18.5% AM1.5 efficiency GaAs solar cell grown by metal organic vapor phase epitaxy: a first step to realize III–V multi-junction cells," Renewable Energy, Elsevier, vol. 2(4), pages 497-499.
    • Handle: RePEc:eee:renene:v:2:y:1992:i:4:p:497-499
    DOI: 10.1016/0960-1481(92)90087-J
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