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High-efficiency InGaN n-type solar cells with engineered bandgap of 1.34eV: A SCAPS-1D numerical study on synthesis, characterization, and device performance

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  • Madi, Lourassi

Abstract

Indium gallium nitride (InGaN) has emerged as a frontrunner for next-generation photovoltaic technologies due to its tunable bandgap (0.7–3.4 eV), high absorption coefficient (>105 cm−1), and inherent radiation hardness. This study numerically investigates the design and optimization of an n-type InGaN solar cell with a bandgap engineered to 1.34 eV, aligning with the Shockley-Queisser (SQ) limit's ideal spectral response. Using SCAPS-1D simulations, we explore the interplay between absorber layer thickness (0.5–1.7 μm), window layer thickness (0.1–0.64 μm), and optical filter to maximize power conversion efficiency (PCE). It should be emphasized that this work is based entirely on numerical simulations using SCAPS-1D, without experimental validation, and thus provides theoretical insights to guide future experimental efforts. The optimized structure achieves a PCE of 22.40 % with an open-circuit voltage (Voc) of 0.83 V, short-circuit current (Jsc) of 30.93 mA/cm2, and fill factor (FF) of 84.21 %. The study validates InGaN's potential to outperform silicon and perovskite solar cells while providing a computational roadmap for experimental synthesis.

Suggested Citation

  • Madi, Lourassi, 2026. "High-efficiency InGaN n-type solar cells with engineered bandgap of 1.34eV: A SCAPS-1D numerical study on synthesis, characterization, and device performance," Renewable Energy, Elsevier, vol. 260(C).
    • Handle: RePEc:eee:renene:v:260:y:2026:i:c:s0960148125028186
    DOI: 10.1016/j.renene.2025.125154
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