High-efficiency InGaN n-type solar cells with engineered bandgap of 1.34eV: A SCAPS-1D numerical study on synthesis, characterization, and device performance
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DOI: 10.1016/j.renene.2025.125154
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- Armin Richter & Ralph Müller & Jan Benick & Frank Feldmann & Bernd Steinhauser & Christian Reichel & Andreas Fell & Martin Bivour & Martin Hermle & Stefan W. Glunz, 2021. "Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses," Nature Energy, Nature, vol. 6(4), pages 429-438, April.
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