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Optoelectronic properties of a-Si1−xGex:H thin films

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  • Alias, M.F.A
  • Alamy, H.Kh
  • Makadsi, M.N

Abstract

Polycrystalline Si1−xGex alloys with different Ge contents were prepared successfully in evacuated quartz tubes, from which a-Si1−xGex:H thin films were prepared by thermal evaporation. Specimens were deposited by varying preparation conditions such as the deposition temperature (Td), Ge content (x) and dopant concentration of As and Al. The composition of the alloys and films was determined by energy-dispersive spectroscopy (EDS) and electron spectroscopy for chemical analysis (ESCA). Our experimental data show that the optical energy gap (Eoptg) decreases with increasing Td, x and dopant concentration of As and Al, while the Urbach energy (Eu) increases with the same. The refractive index (n) and the extinction coefficient (κ) increase with increasing Td, x and dopant concentration. We found two empirical formulas, one relating Eoptg with x and the other describing the dependence of n on x.

Suggested Citation

  • Alias, M.F.A & Alamy, H.Kh & Makadsi, M.N, 2001. "Optoelectronic properties of a-Si1−xGex:H thin films," Renewable Energy, Elsevier, vol. 24(3), pages 341-346.
    • Handle: RePEc:eee:renene:v:24:y:2001:i:3:p:341-346
    DOI: 10.1016/S0960-1481(01)00014-3
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