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1/f noise under drift and thermal agitation in semiconductor materials

Author

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  • Grüneis, Ferdinand

Abstract

Voss and Clarke observed 1/f noise in the square of Johnson noise across samples in thermal equilibrium without applying a current. We refer to this phenomenon as “thermal 1/f noise”. Voss and Clarke suggested spatially correlated temperature fluctuations as an origin of thermal 1/f noise; they also showed that thermal 1/f noise closely matches the 1/f spectrum obtained by passing a current through the sample. An intermittent generation–recombination (g–r) process has recently been introduced to interpret 1/f noise in semiconductors. The square of this intermittent g–r process generates a 1/f noise component which correlates with Voss and Clarke’s empirical findings. Traps which intermittently rather than continuously generate g–r pulses are suggested as the origin of 1/f noise under drift and thermal agitation. We see no need to introduce correlated temperature fluctuations or oxide traps with a large distribution of time constants to explain 1/f noise.

Suggested Citation

  • Grüneis, Ferdinand, 2022. "1/f noise under drift and thermal agitation in semiconductor materials," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 593(C).
    • Handle: RePEc:eee:phsmap:v:593:y:2022:i:c:s0378437122000383
    DOI: 10.1016/j.physa.2022.126917
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